ICE0510_Handout-08.ppt

Reverse Bias Time Variation of Stored Charge (Eq 4-31a) (Eq. 4-40) For V = -Vr (Vr kT/q) : Total Current Figure 5—15 Forward-biased junction: (a) minority carrier distributions on the two sides of the transition region and definitions of distances xn and xp measured from the transition region edges; (b) variation of the quasi-Fermi levels with position. On either side of the junction, the minority carrier quasi-Fermi level varies significantly while the majority carrier concentration is not affected much. Thus, the majority carrier quasi-Fermi level is so close to the original EF and also the quasi-Fermi levels are somewhat flat within the depletion region. For an ideal diode, within the depletion region, the product of the gradient of the quasi-Fermi level and carrier concentration must be independent of position. For a given constant current, the gradient in the quasi-Fermi level must be large for minority carriers since the carrier concentration is small. On the other hand, for majority carriers, very small gradient is needed in the quasi-Fermi level. Within W, there is an intermediate situation, where the carrier concentration is changing from majority on one side to minority on the other. Note: Although there is some variation in Fp and Fn within W, it does not show up on the scale in Fig. 5-15. Figure 5—16 Two methods for calculating junction current from the excess minority carrier distributions: (a) diffusion currents at the edges of the transition region; (b) charge in the distributions divided by the minority carrier lifetimes; (c) the diode equation. Another way of calculating the total current This is the same as what was calculated from the diffusion currents (eq. 5-33). Two ways to calculate the current at a p-n junction : From the slopes of the excess minority carrier distributions at the two edges of the transition regions. From the steady state charge stored in each distribution. Total current Minority carrier current Majority carrier cur