TI-DRV8305-Q1汽车三相BLDC栅极驱动方案.docxVIP

TI DRV8305－Q1汽车三相BLDC栅极驱动方案时间：2016-06-29 13:36:57?????? 作者：TI?????? 来源：中电网TI公司的DRV8305-Q1是三相马达驱动用的栅极驱动器,提供三个半桥驱动器,每个能驱动高边和低边N沟MOSFET;电荷泵驱动器支持100%占空比.器件满足AEC-Q100标准,4.4-V 到45-V工作电压,栅极峰值电流1.25A和1A,工作温度–40℃到150℃,主要用在三相BLDC和PMSM马达,汽车油泵和水泵,风扇和鼓风电动机.本文介绍了DRV8305-Q1主要特性,功能框图,典型应用电路图以及DRV8305-Q1EVM汽车三相马达栅极驱动评估模块主要特性,框图,电路图和材料清单.The DRV8305-Q1 device is a gate driver IC for three-phase motor-drive applications. The device provides three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low-voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V.The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference.The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low-system standby and sleep currents.The gate driver uses automatic handshaking when switching to prevent current shoot through. The VDS?of both the high-side and low-side MOSFETs is accurately sensed to protect the external MOSFETs from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configurations such as gain options for the current shunt amplifier, individual MOSFET overcurrent detection, and gate-drive slew-rate control.Device Options:DRV8305NQ: Grade 1 with voltage referenceDRV83053Q: Grade 1 with 3.3-V, 50-mA LDODRV83055Q: Grade 1 with 5-V, 50-mA LDODRV8305NE: Grade 0 with voltage referenceDRV8305-Q1主要特性:AEC-Q100 Qualified for Automotive ApplicationsAmbient Operating Temperature Ranges:?Temperature Grade 0(E): –40℃ to 150℃Temperature Grade 1(Q): –40℃ to 125℃4.4-V to 45-V Operating Voltage1.25-A and 1-A Peak Gate Drive CurrentsSmart Gate Drive Architecture (IDR