天科合达2英寸6H导电型SiC晶片产品标准.docVIP

天科合达2英寸4H导电型SiC晶片产品标准 Silicon Carbide SiC Substrate Specification 2 inch 50.8mm diameter, 4H polytype, N-type 等级 Grade A B C 晶型 Polytype H 4H 4H 直径 Diameter 50.80±0.38mm 2.000″±0.015″ 50.80mm±0.38mm 2.000″±0.015″ 50.80mm±0.38mm 2.000″±0.015″ 厚度 Thickness 330/430 μm±25μm 330/430 μm±25μm 330/430 μm±25μm 载流子类型 Carrier Type N型 N-type N型 N-type N型 N-type 电阻率 Resistivity 0.02Ωcm ~0.03 Ω·cm 0.012Ωcm ~0.03 Ω·cm 0.012Ωcm ~0.1Ω·cm 晶片方向 Wafer Orientation 0.0°/4.0°/8.0°±0.5° 0.0°/4.0/°8.0°±0.5° 0.0°/4.0/°8.0°±0.5° 总厚度变化弯曲度翘曲度Bow /Warp ＜25μm ＜25μm ＜25μm 微管密度 Micropipe Density ＜ cm-2 ＜ cm-2 ＜ cm-2 表面粗糙度 Roughness Polish＜ nm Polish Ra＜ nm Polish Ra＜ nm CMP Ra＜0. nm CMP Ra＜0. nm CMP Ra＜0. nm 半高宽 FWHM ＜ arcsec ＜ arcsec ＜ arcsec 边缘 Edge exclusion 1 mm 1 mm 1 mm 主定位边方向 Primary Flat Orientation ±5.0° 10-10 ±5.0° 10-10 ±5.0° 主定位边长度 Primary Flat Length 15.±1.7 mm 0.625″±0.065 ″ 15.9 mm±1.7 mm 0.625″±0.065 ″ 15.9 mm±1.7 mm 0.625″±0.065 ″ 次定位边方向 Secondary Flat Orientation C-face:90° ccw.rom orientation flat ??5° C-face:90° ccw. from orientation flat ??5° C-face:90° ccw. from orientation flat ??5° Si-face:90° cw. from orientation flat ??5° Si-face:90° cw. from orientation flat ??5° Si-face:90° cw. from orientation flat ??5° 次定位边长度 Secondary Flat Length 8.0m±1.65 mm 0.315″±0.065″ 8.0 mm±1.65 mm 0.315″±0.065″ 8.0 mm±1.65 mm 0.315″±0.065″ 裂纹 强光灯观测 Cracks by high intensity light 无 None 无 None 小于3个，每个小于2mm 3 allowed ≤2mm each 杂晶（强光灯观测） Hex Plates by high intensity light 无 None 少于2个，累积面积 1% Less than 2,Cumulative area 2% 累积面积 2% Cumulative area 2% 多型 强光灯观测 Polytype Areas by high intensity light 无 None 无 None ≤3 % area 划痕 强光灯观测 Scratches by high intensity light 无 None 无 None 无 None 表面污染物（强光灯观测） Contamination by high intensity light 无 None 无 None 无 None 有用面积 Usable area ＞0% ＞% ＞0% * For detailed quotes and special requirements please contact our sales office.