纳米科学与技术分析.ppt

Schematic process flow for the synthesis of regular arrays of oriented nanotubes on porous silicon by catalyst patterning and CVD 蚀刻技术 电子束蒸发 Electron micrographs of self-oriented nanotubes synthesized on n1-type porous silicon substrates. A SEM image of nanotube blocks synthesized on 250 mm by 250 mm catalyst patterns. The nanotubes are 80 mm long and oriented perpendicular to the substrate [see F ]. B SEM imageof nanotube towers synthesized on 38 mm by 38 mm catalyst patterns. The nanotubes are 130 mmlong. C Side view of the nanotube towers in B . The nanotubes self-assemble such that the edgesof the towers are perfectly perpendicular to the substrate. D Nanotube “twin towers,” a zoom-inview of Fig. 2C. E SEM image showing sharp edges and corners at the top of a nanotube tower. F SEM image showing that nanotubes in a block are well aligned to the direction perpendicular to the substrate surface. G TEM image of pure multiwalled nanotubes in several nanotube blocksgrown on a n1-type porous silicon substrate. A Benzene-Thermal Synthetic Route to Nanocrystalline GaN Yi Xie, Yitai Qian, Wenzhong Wang, Shuyuan Zhang, Yuheng Zhang A thermal reaction of Li3N and GaCl3 in which benzene was used as the solvent under pressure has been carried out for the preparation of 30-nanometer particles of gallium nitride GaN at 280°C. This temperature is much lower than that of traditional methods, and the yield of GaN reached 80%. 苯热法 钱逸泰 Single-crystal nanorings of ZnO were grown by a solid-vapor process. The raw material was a mixture of ZnO melting point 1975°C , indium oxide, and lithium carbonate powders at a weight ratio of 20:1:1, and it was placed at the highest temperature zone of a horizontal tube furnace. Before heating to a desired temperature of 1400°C, the tube furnace was evacuated to 10-3 torr to remove the residual oxygen. The source materials were then heated to 1400°C at a heating rate of 20°C/min. ZnO decomposes into Zn2+ and O2– at high tempe