半导体行业对外试设备介绍.doc

SSM 2000 SRP介绍 The spreading resistance technique is a method for measuring the electrical properties of semiconductor materials with very high spatial resolution; it is based on measurements of the contact resistance of specially prepared point contacts on doped silicon samples. The SSM 2000 NANOSRP? System is an automated spreading resistance probe designed to characterize the electrical properties of doped silicon materials. This system generates profiles of resistivity, carrier density, and electrically active dopant density more quickly and more easily than its predecessor, the SSM 150. It is the most advanced SRP test machine in world. Silan characteristic Can afford the best accuracy result for custom. We have the unique ability to test the Ultrashallow layer. Example we can test implant resistivity profiler on surface. We can guarantee 6nm resolution for test Ultrashallow layer. 3、Can measure the resistivity of patterned samples (dimension of pattern above 80um) . 扩展电阻率测试是用高分辨率测试半导体材料的电特性。它基于被测样片上接触的探针来测试。SSM 2000 是一台自动的用扩展电阻的方法来反应参杂硅材料电特性的机器。它能产生整个硅片电阻率的轮廓特性，载流子浓度，参杂浓度。 它比国内常用的SSM 150要快速，准确许多。是目前世界最先进的SRP测试设备之一。 士兰特点： 1、能给用户提供国内最精确的测试结果。 2、是国内唯一有能力准确测试浅层结构，如注入表层电阻率的变化特性。能保证6nm的分辨率准确性。 3、能测试图形中样品的扩展电阻率（图形尺寸80um以上）。 SSM495 C-V测试仪 The SSM495 is an automatic mercury probe capacitance-voltage (CV) measuring system. The SSM 495 has an advanced measurement tool with many characteristics such as good spatial resolution, good sensitivity and non-destructive. The resistivity of all kinds epi samples can be accurately measured using SSM 495. The measurement range is from 0.1 to 100Ω.cm in n-type wafer; from 0.24 to 330 Ω.cm in P-type wafers. The SSM495 can also be used to monitor oxide quality (Threshold voltage: Vth; Flat band voltage: Vfb; Oxide capacitance: Cox; Effective oxide charge: Neff ). In addition, it can offer good resolution in monitoring the implant dose of B, P or As in the channel region under the gate. SILAN Characteristic We can test most