电子器件_场效应晶体管3课件.pptVIP

(4) MOS Capacitor (ideal) Capacitance-voltage characteristics(电容电压特性） (2)To measure the fast interface state Dit (3)To measure the mobile charge within the oxide Fig.6-22 6.4.6 Time-dependent capacitance measurementsTo measure the generation lifetime 6.4.7 Current-voltage characteristics of MOS gate oxidesTo understand the leakage current through the oxideFig. 6-24 (Something wrong, see English textbook and page 233(chinese textbook)) Summary (1) 实际器件与理想情况存在偏差：实际情况要考虑功函数差及界面电荷效应。 (2)实际情况下存在平带电压，从而使阈值电压偏离理想的电压值。n沟道/p-型衬底的阈值电压可正可负，与掺杂浓度有关。由于界面效应，增强型器件可能变为耗尽型。 (3)根据C-VG曲线，可以求得掺杂浓度，平带电压，阈值电压，界面快态密度及可移动离子密度。 * 6.4.3 Effects of real surfaces alkali metal ions 碱金属离子 sodium(Na+) ion 钠离子 mobile charge可动电荷 trapped charge陷阱电荷 interface charge界面电荷 fixed charge固定电荷 effective positive charge有效正电荷 heavily doped poly-silicon重掺杂多晶硅 MOS Structure Poly-silicon-OS Structure Ideal MOS capacitance Real Surface Effects: Work function difference interface charge Non-ideal capacitance (1)work function difference semiconductor oxide n+ polysilicon(多晶硅) ?ms=?m-?s n+ poly-n Si n+ poly-p Si Ideal Non-ideal (EFm-EFs)= (q?s-q?m) V=?s-?m VG=VFB(平带电压)= -V= ?m -?s=? ms (2) Interface charge Generally, there are four types of charges in a practical MOS structure. Mobile ionic charge Qm可动离子电荷 Oxide trapped charge Qot氧化物陷阱电荷 Oxide fixed charge Qf氧化物固定电荷 Interface trap charge Qit界面陷阱电荷 Ideal Interface charge Qi Effects of real surface 6.4.4 Threshold voltage To achieve the flat band To accommodate the depletion charge To induce the inverted region Qd= -qNaWm (n channel/P-sub) Qd= qNdWm (p channel/N-sub) When is the threshold voltage of p-channel MOSFET greater than 0? How to do? 1）flat band voltage 2）threshold voltage 3）depletion mode because VT0 Ci Cs Because Cs is depending on VG, the overall capacitance becomes voltage dependent. Ci Cs To measure the capacitance, we must superpose the small a-c signal to the voltage. That is VG=V+dVG.Her