电子器件_场效应晶体管4课件.pptVIP

6.5 The MOS Field Effect Transistor aluminum 铝 amorphous 无定形的 tungsten 钨 oxynitride 氧氮化物 ferroelectrics 铁电体 tantalum(Ta ) 钽 barium (Ba) 钡 strontium 锶 titanate 钛酸盐 boron (B) 硼 phosphorus (P) 磷 incorporated 合成一体的 zirconium 锆 layout 版图 intercept 截距 To obtain the exact ID, 6.5.2 Transfer Characteristics(转移特性, ID~VG) Effect of longitudinal electric field : Control of Ci: (1) d thickness of gate oxide and field oxide (2) high ?i material : Ta2O5, ZrO2 and ferroelectrics Problem: Consider an n+ polysilicon-SiO2 –Si p-channel device with Nd=1016cm-3 and Qi=5×1010qC/cm2. Calculate VT for a gate oxide thickness of 0.01μm and repeat for a field oxide thickness of 0.5μm. Фms=-0.25V. Example 6-3 For a p-channel transistor with a gate oxide thickness of 10nm, calculate the boron ion dose FB(B+ ions/cm2) required to reduce VT from -1.1V to -0.5V. Assume that the implanted acceptors form a sheet of negative charge just below the Si surface. If ,instead of a shallow B implant, it was a much broader distribution, how would the VT calculation change ? Assuming a boron ion beam current of 10-5 A, and supposing that the area scanned by the ion beam is 650cm2, how long does this implant take? Some questions 1. MOSFET 器件的平带电压是如何产生的? 2. 非理想情况下,MOSFET 的阈值电压由哪几项组成?它们与什么参数有关? 3. 采用什么方法和手段可以控制阈值电压? 4.MOSFET中描述其特性的一个参数为跨导gm, 它描述了器件的什么特性? standby 待机 reciprocal 倒数 scaling down/等比例缩小 power dissipation/功耗 packing density/集成密度 operation speed/工作速度 channel hot electron effect/沟道热电子效应 substrate hot electron effect/衬底热电子效应 Miller overlap Capacitance 米勒覆盖电容 * 6.5.1 Output characteristics(输出特性,ID~VD) The voltage drop between the source(or drain) electrode and the end of channel near the source(or drain) is neglected. The mobility in the inversion layer is assumed to be constant. Gradual channel approximation: The electric field perpendicular to the channel ?y is independent of that parallel to the channel ?x, and ?y ?x So