SEMICONDUCTORNANOWIREMANIPULATIONUSING.pptVIP

SEMICONDUCTOR NANOWIRE MANIPULATION USING IPTOELECTRONIC TWEEZERS Arsh Jamshidi, Peter J. Pauzauskie, Aaron T. Ohta , Pei-Yu Chiou, Peidong Yang and Ming C, Wu University of Caligormia, Berkeley,USA IEEE MEMS2007 報告人:蘇聖欽 Outline Motivation Theoretical Background Optical Tweezers Optoelectronic tweezers Theory Optoelectronic tweezers Force Device Structure Experimental Results Experimental Setup Manipulation of Silicon Nanowires Speed and Trapping Radius Measurements Nanowires Assembly Conclusion Motivation The ability of optical tweezers to perform parallel assembly is hampered by their high optical power density (107w/cm2) and small area (approximately 1 um*1 um) . Dielectrophoresis can trap nanowires ,but he trapping sites are fixed the electrode pattern . OET is capable of manipulating a large number of microparticles or cells over a large area . Outline Motivation Theoretical Background Optical Tweezers Optoelectronic tweezers Theory Optoelectronic tweezers Force Device Structure Experimental Results Experimental Setup Manipulation of Silicon Nanowires Speed and Trapping Radius Measurements Nanowire Assembly Conclusion Optical Tweezers Mie regime(米氏定理) : 適用的粒子大小diameter of particle ?。 動量守恆原理。 Rayleigh regime(雷利定理) : 適用的粒子大小diameter of particle ?。 電磁波理論，變動的電場使粒子極化，產生引力。 Optoelectronic tweezers Theory They use AC voltage producing electric field . Optoelectronic tweezers Force Optoelectronic tweezers force under an AC bias is given by: Drag force: Device Structure OET device apparatus : a top indium-tin–oxide (ITO) electrode a 1–um-thick layer of photoconductive material (amorphous silicon) An applied AC bias of 20 Vpp at 50kHz Outline Motivation Theoretical Background Optical Tweezers Optoelectronic tweezers Theory Optoelectronic tweezers Force Device Structure Experimental Results Experimental Setup Manipulation of Silicon Nanowires Speed and Trapping Radius Measurements Nanowire Assembly Conclusion Experimental Setup Manipulation of S