tsuprem4I.ppt

TSUPREM IV SUPREM 斯坦福大学开发 SUPREM I：1977年。 SUPREM II：1978年。 TSUPREM III ：1983年。商业版，只限于作一维分析。 TSUPREM IV： 1988年。二维工艺分析。 Taurus TSUPREM IV：Synopsys，新工艺（选择性外延、多晶硅氧化、CMP等）、提高运算精度和速度。 登陆unix 登陆unix 登陆unix 登陆UNIX 登陆UNIX 登陆UNIX 登陆UNIX 登陆UNIX NMOS mask program1 $ TSUPREM4 NMOS transistor simulation $ Part a: Through field oxidation $ Define the grid MESH GRID.FAC=1.5 $METHOD ERR.FAC=2.0 $ Read the mask definition file MASK IN.FILE=mask.tl1 PRINT GRID=Field,Poly $ Initialize the structure INITIALIZE 100 BORON=5E15 output $ Read the mask definition file MASK IN.FILE=mask.tl1 PRINT Comments from mask data file ”mask.tl1”: / Mask definition file s4ex4m.tl1, for use with s4ex4[abc]. (End of comments from mask data file) The following masks are currently defined (locations in microns): Name: Field min X: 0.0000 max X: 5.0000 opaque between 0.0000 and 3.9000 Name: Poly min X: 0.0000 max X: 5.0000 opaque between 0.0000 and 0.6500 Name: Contact min X: 0.0000 max X: 5.0000 opaque between 0.0000 and 1.9500 opaque between 3.2500 and 5.0000 Name: Metal min X: 0.0000 max X: 5.0000 opaque between 1.3000 and 5.0000 program1 $ Initial oxidation DIFFUSION TIME=30 TEMP=1000 DRY HCL=5 $ Nitride deposition and field region mask DEPOSIT NITRIDE THICKNESS=0.07 SPACES=4 DEPOSIT PHOTORESIST POSITIVE THICKNESS=1 EXPOSE MASK=Field DEVELOP ETCH NITRIDE TRAP ETCH OXIDE TRAP UNDERCUT=0.1 ETCH SILICON TRAP THICKNES=0.25 UNDERCUT=0.1 $ Boron field implant IMPLANT BORON DOSE=5E12 ENERGY=50 TILT=7 ROTATION=30 ETCH PHOTORESIST ALL program1 $ Field oxidation METHOD PD.TRANS COMPRESS DIFFUSION TIME=20 TEMP=800 T.FINAL=1000 DIFFUSION TIME=180 TEMP=1000 WETO2 DIFFUSION TIME=20 TEMP=1000 T.FINAL=800 ETCH NITRIDE ALL $ Unmasked enhancement implant IMPLANT BORON DOSE=1E12 ENERGY=40 TILT=7 ROTATION=30 $ Save structure SAVEFILE OUT.FILE=S4EX4AS program1 $ Plot the initial NMOS structure SELECT Z=LOG10(BORON) TITLE=LDD Process - NMOS Isolation Region PLOT.2D SCALE GRID C.GRID=2 Y.MAX=2.0 program1