Lesson 2 Memory Devices90716.pptVIP

《电子信息工程专业英语教程》 Unit 1 Electronic Devices Lesson 2 Memory Devices 《电子信息工程专业英语教程》任治刚 主编 电子工业出版社 Lesson 2 Memory Devices Terminology MOS, PMOS, NMOS, CMOS Flip-flop, Register SRAM, DRAM, ROM, EEPROM CAM Cache Ferroelectric Terminology MOS: Metal-oxide semiconductor 金属氧化物半导体 PMOS: p-type Metal-oxide semiconductor p型金属氧化物半导体 NMOS: n-type Metal-oxide semiconductor n型金属氧化物半导体 CMOS: Complementary Metal-Oxide-Semiconductor 互补金属氧化物半导体 CMOS 是一类集成电路的总称。这种集成电路的输出结构由一个n型MOSFEF（金属氧化物半导体场效应晶体管）和一个P型MOSFET串联而成。因为n型和p型MOSFET是相互补偿的,所以也常常使用“互补”一词来说明这种集成电路。 A flip-flop is basically a bi-state circuit in which either a 0 or 1 state can resides. Because of its simplicity, the flip-flop is extremely fast. As a basic element, the flip-flop is used in digital circuits and ICs. A flip-flop will lose its state when the supply voltage is removed. Therefore, it is volatile. 触发器是一种存储“0”或“1”的双态电路。由于触发器结构简单，所以其速度极快。触发器是数字电路和集成电路中的基本部件。由于电源电压去掉后，触发器原有的状态就失去了，因此它是“易失的”。 A register is a set of flip-flops in parallel. Typically a register is 8,16,32 or 64 bits wide. Often a register is used to hold data, address pointers, etc. A register is volatile and very fast just like the flip-flop. 寄存器是一组并行触发器。寄存器的典型数据宽度为8位、16位、32位或者64位。寄存器常用于保存数据、地址指针等。和触发器一样，寄存器也是“易失”的，而且速度很快。 SRAM: Static Random Access Memory An SRAM is an array of addressable flip-flops. The array can be configured as such that the data comes out in single bit, 4-bit, 8bit, and etc. format. SRAM is simple, fast and volatile just like the flip-flop, its basic memory cell. 静态随机存取存储器( SRAM)是一种可寻址的触发器阵列。该阵列可配置成1位、4位、8位等数据格式。它和它的基本存储单元触发器一样：结构简单、存取速度快、具有易失的特点。 DRAM：Dynamic Random Access Memory The word ′dynamic′ indicates that the data is not held in a flip-flop but rather in a storage cell. The data in a storage cell must be refreshed (read out and re-written) regularly because of leakage. 动态随机存取存储器 ：“动态”这个词意味着数据不是保存在触发器当中，而是保存在一个存储单元中。由于存在泄漏，所以保存在存储单元中的数据必须定期更新（读出并重新写入）。 ROM: Read Only Memory ROMs are also called mask-ROMs