微波CVD制备硅薄膜类金刚石薄膜白辉勇,熊军.pptVIP

微波CVD制备硅薄膜 类金刚石薄膜 微波法制备大面积硅薄膜设备及工艺（大面积） 表面波微波等离子体 线形微波等离子体 表面波微波法制备微晶硅薄膜工艺条件 线形微波等离子体制备大面积硅薄膜设备 多轴级的平面微波等离子体的结构原理图（1:4 功率分配） 图.３ 轴心结构和轴心的局部图 EcoVeRaR公司实验室镀膜系统 ,16轴级,8微波发生器的平面等离子体源(覆盖面积1 m2),下视(左图),上视(中间)． 微波CVD制备类金刚石薄膜设备及工艺 微波CVD法制备类金刚石工艺条件 Thanks！ * 让不可能成为可能 Making the IMPOSSIBLE possible Capacitvely Coupled Plasma １３．５６ – ６０ＭＨｚ Relatively low density Non-uniformity caused by Standing Wave Effect Skin Effect Edge Effect Electromagnetic properties Quasi-static property Electrostatic property PECVD MWCVD（表面波微波等离子体） (1010 – 1011 cm-3) Surface Wave Plasma Relatively high density (1011 ~ 1012 cm-3) Microwave (915MHz, 2.45 GHz) Easy control of uniformity Quartz Plate Surface Wave Plasma 0 1 2 3 4 1990 1995 2000 2005 Glass Plate Area (m2) Working Year 2010 7th Gen. 6th Gen. 5th Gen. 4th Gen. 3rd Gen. 2nd Gen. 1st Generation 300x400 370x470 550x670 730x920 1,100x1,250 1,500x1,850 1,8700x2,250 Trend of LCD Panel Great need for large-area plasma sources for giant materials processing. Example: - thin film deposition for LCD (Liquid Crystal Display) - Thin film solar cell - surface coating of housing glass plate for UV and IR light cut, - surface modification of plastic materials and paper Giant Materials Processing Plasma Quartz plate Waveguide T-shape quartz Use of T-shape quartz Huge mechanical force on quartz plate Area of 1 m2 Pressure of 8 tons 7 cm thick quartz plate Microwave CVD --- Giant High-density Plasma Waveguide 2.45GHz 1 m Quartz Plate Plasma Quartz Plate 8 tons/m2 7 cm l0=12 cm Si Deposition on Large Substrate Glass Substrate Polymer Film Substrate 1.8 m 0.2 m 1.8 m 0.3 m Experimental Conditions Microwave Power ~6kW Pressure 7 Pa H2/SiH4=25/25 sccm Substrate Temperature 250oC Experimental Conditions Microwave Power ~4kW Pressure 12 Pa H2/SiH4=25/50 sccm Substrate Temperature 180oC Micro-crystalline Si films Amorphous Si films Power: 2 kW, Total fl