resultsandprospectiveofcvdprocessingwithuseof.docVIP

Results and prospective of CVD processing with use of complicated elementorganic compounds in preparation of electronic materials F.A. Kuznetsov, I.K. Igumenov, T.P. Smirnova, N.I. Fainer, N.V. Gelfond, M.L. Kosinova, N.B. Morozova, Yu. M. Rumyantsev, L.V. Yakovkina Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, Russia Abstract Chemical vapour deposition were used to produced high k dielectric films of HfO2 films, low k dielectric films of SiCxNy and metal films of platinum group metals. IR and Raman spectroscopy, AES, XPS, ellipsometry, XRD using the synchrotron radiation, EDS, SEM, AFM, measurements of electrophysical, mechanical characteristics and optical properties were applied to study their physicochemical and functional properties.HfO2 films were grown on n-type Si(100) substrates using dipivaloilmethanate hafnium (IV) and cyclopentadienyl hafnium bisdiethylamide as precursors. It was found that the deposited HfO2 films react with the SiO2 layer to be synthesized on silicon substrate and an intermediate amorphous layer was formed. The amorphous layer is composed of hafnium silicate and nonreacted SiO2 layer. It was shown by thermodynamic analysis of the Si-SiO2-HfO2-Hf system that a composition Si/HfO2-у is thermodynamically stable into narrow interval of oxygen pressure. As the oxygen partial pressure was increased (which is equivalent to presence of SiO2 layer) the composition Si/HfSiO4/HfO2-у is equilibrium. SiCxNy films were synthesized using siliconorganic compound as single-source precursor. It was shown that low temperature films are low-k dielectrics with the following characteristics: a dielectric constant of 3.0 – 7.0, specific resistance, ( = 1013-1016 Om(cm, Edielectric breakdown~ 1 MV/cm, surface state density Nss ~ 2.4·1011 cm-2·eV-1 and fixed charge density of about? 1.6 x 1011 cm-2. The bandgap of the films changes from 5.35 up to ~ 3.30 eV. Microhardness of these films changes from 1.9 up to 2.4 GPa, and Youngs modulus