AccuratePhysicalModelfortheLateralIGBTinSiliconOn.ppt

sss Outline Motivation Thin SOI LIGBT Differences with Vertical IGBT Spice sub-circuit model for LIGBT Model equations Model behavior Numerical results Conclusion Motivation Available IGBT circuit models are not suited to Lateral IGBT Need for a reliable physical based model for Lateral IGBT usable in various circuit simulators Extension to different LIGBT technologies Important for smart power design Thin SOI Lateral IGBT 600V PT Transparent buffer Source and Drain up to the BOX Current flow is horizontal and 1D Differences with Vertical IGBT (1) Not zero carrier concentration at the collector edge for LIGBT Differences with Vertical IGBT (2) Electrons injected from the n+ accumulation layer into the n- drift across the n+/n- junction. The structure features double injection (similar to a PIN or a thyristor) Differences with Vertical IGBT (3) Total charge and charge profile LIGBT Vertical IGBT Differences with Vertical IGBT (4) Depletion width vs. reverse voltage is influenced by 2D effects Differences with Vertical IGBT (5) Depletion width LIGBT vs. Vertical IGBT 0V Differences with Vertical IGBT (5) Depletion width LIGBT vs. Vertical IGBT 5V Differences with Vertical IGBT (5) Depletion width LIGBT vs. Vertical IGBT 10V Differences with Vertical IGBT (5) Depletion width LIGBT vs. Vertical IGBT 100V Differences with Vertical IGBT (5) Depletion width LIGBT vs. Vertical IGBT 200V Differences with Vertical IGBT (5) Depletion width LIGBT vs. Vertical IGBT 300V Differences with Vertical IGBT (6) Depletion region mobile charge effect IGBT models not suited for LIGBT Voltage rise at turn-off is faster due to lower charge in the epilayer and slower depletion width expansion Spice sub-circuit model for LIGBT Vj : Emitter junction Vdrift: Depends on the injected carriers analytic solution Vmos: Mosfet (level 1) Spice sub-circuit model for LIGBT IN(W) : Electron current through the level 1 Mosfet Spice sub-circuit model for LIGBT IP(W) : Bipolar hole cu