半导体激光器光束复合解析.doc

Study on the Beam Multiplexing of Diode Laser Arrays 半导体激光器列阵光束复合技术研究 摘要：文中针对半导体激光器列阵的波长复合和偏振复合技术开展了设计和实验研究。首先利用半导体材料波长易调节的特点，设计了AlGaInAs/GaAs/AlGaAs压应变量子阱结构，得到了760nm、800nm、860nm、930nm、976nm五个波长激射的半导体列阵激光器，同时设计了四个短波通滤波片参数，开展了半导体列阵激光器的多波长光束复合技术的实验研究; Abstract: Design and experimental studies on the wavelength multiplexing and polarization composite of diode laser arrays were carried out in this article. First, the structure of AlGaInAs / GaAs / AlGaAs quantum well under compressive strain was used, for semiconductor materials’ characteristic of the wavelength is easy to adjust. As a result,