Doping and Crystal Growth Techniques掺杂和晶体生长技术.pptVIP

Carrier Mobility and Velocity Mobility - the ease at which a carrier (electron or hole) moves in a semiconductor Symbol: mn for electrons and mp for holes Drift velocity – the speed at which a carrier moves in a crystal when an electric field is present For electrons: vd = mn E For holes: vd = mp E Drift Currents Four Point Probe Probe tips must make an Ohmic contact Useful for Si Not most compound semiconductors Diffusion When there are changes in the concentration of electrons and/or holes along a piece of semiconductor the Coulombic repulsion of the carriers force the carriers to flow towards the region with a lower concentration. Diffusion Currents Relationship between Diffusivity and Mobility Mobility vs. Dopant Concentration in Silicon http://www.ioffe.ru/SVA/NSM/Semicond/Si/electric.html#Hall Van der Pauw Four equidistant Ohmic contacts Contacts are small in area Current is injected across the diagonal Voltage is measured across the other diagonal Top view of Van der Pauw sample /812/meas.htm#geom Calculation Resistance is determined with and without a magnetic field applied perpendicular to the sample. F is a correction factor that takes into account the geometric shape of the sample. Hall Measurement See /812/hall.html for a more complete explanation http://www.sp.phy.cam.ac.uk/SPWeb/research/QHE.html Calculation Measurement of resistance is made while a magnetic field is applied perpendicular to the surface of the Hall sample. The force applied causes a build-up of carriers along the sidewall of the sample The magnitude of this buildup is also a function of the mobility of the carriers where A is the cross-sectional area. N vs. P doping The sign of the Hall voltage, VH, and on D R13,24 in the Van der Pauw measurement provide information on doping. Epitaxial Material Growth Liquid Phase Epitaxy (LPE) Vapor Phase Epitaxy (VPE) Molecular Beam Epitaxy (MBE) Atomic Layer Deposition (ALD) or Atomic Layer Epitaxy (ALE) Metal Organic Chem