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CHAPTER 3 The Semiconductor in Equilibrium Or The electron concentration is given by Or ▇ Comment The probability of a state being occupied in the conduction band can be quite small，but the thermal equilibrium value of electron concentration can be a reasonable value since the density of States large. Exercise Problem EX3.1 Calculate the thermal equilibrium electron concentration in silicon at T=300K for the case when the Fermi level is 0.25eV below the conduction-band energy,. The thermal-equilibrium concentration of holes in the valence band is found by integrating Equation （3.2）over the range of energies in the valence-band energy,orDensity of holes. (3.12) Where is the maximum energy of the valence band and is the minimum energy of the valence band .However,the function approaches zero very quickly as the energy decreases,as seen in Figure 3.1d,so we may let we can note that (3.13a) For energy states in the valence band,.IF(kT)(the Fermi function is still assumed to be within bandgap),then we have a slightly different form of the Boltzmann approximation.Equation（3.13a）can be written as (3.13b) Applying the boltzmann approximation of Equation (3.12), we find the thermal-equilibrium concentration of holes in the valence band is Where the lower of integration is taken as minus infinity of the bottom of the valence band.The exponential term decays fast enough so that this approximation is valid. Equation（3.14）can be solved more easily by again making a change of variable If we let Then Equation （3.14）becomes Where the negative sign comes from the differential dE=.Note that the lower limit ofbecomes +∞when If we change the of integration,we introduce another minus sign. From Equation（3.8）Equation （3.16）becomes We may define a parameter as Which is called the effective density of