三代半导体功率器件的特点与应用分析讲解.pdf

30 　 7 Vo.l30　No.7 　 　　　　　　　　　 　　 　　　　　　　　　　　　　 10 　2008 7 ModernRadar Jul2008 ＊ 专家论坛 　　　 郑　新 (南京电子技术研究所, 　南京 210013 ) 【】　 Si GaAs 。 SiC GaN --、、、 、、、。 、、、 。、、、、、 ;、、; 。 【】　;; :TN72　　:A CharacteristicsandApplicationAnalsisof SemiconductorPowerDevicesforThreeGenerations ZHENGXin (NanjingResearchInstituteofElectronicsTechnolog, 　Nanjing2100 13, China) 【Abstract】　 ThesiliconbipolarpowertransistorandGaAsFET, whichrepresentthefirstgenerationandthesecondgenera- tionsemiconductorpowerdevicesrespectivel, havemadesignficantcontributionxstolargescalesolidificationandreliabilitim- provementofradartransmitter.sInrecentear,sSiCFETpowertransistorandGaNhighelectronmovabilitpowertransistorrepre- sentthethirdgenerationsemiconductor-widebandgapsemiconductorpowerdevice,shaveadvantagesofhighbreakdownvoltag,e highpowerdensit, aswellashighoutputpowe,rhighoperationefficienc, highoperationfrequenc, wideinstantaneousband- width, operationinhightemperatureenvironmentandstrongabilitofresistingradiation.Itisexpectedthatthewidebandgapsem- iconductorpowerdeviceswouldresolvetheproblemsoflosoutputpowe,rlowefficiencandlmiitedoperationfrequencoffirstand secondgenerationpowerdeviceswhichcannogmeettheelectronicequipmentrequirementsofmodernrada,rECMandcommunica- tion.Thispaperintroducesbrieflthesemiconductorpowerdevicesdevelopmentbackground, developmentproces,sclassification, characteristic,sapplication,smainperformanceparametersandseveralsemiconductorpowerdevicesincommonuse.