第4章 存储器.pptVIP

线性地址转换为物理地址2 第一步是查询CR3 第二步是将线性地址的高10位作为页组项号 第三步是查询相应页组目录对应的页表 线性地址转换为物理地址3 图4.20 线性地址转换为物理地址的例子 相关知识点 微型机内存的行列结构； 片选信号的产生方法； SRAM和DRAM的连接举例； 层次化的存储器结构； 32位微型机的内存组织； 虚拟存储技术和三类地址； 分段管理和分页管理； 段选择子、段描述苻和段描述苻表； 逻辑地址转换为线性地址的例子； 线性地址转换为物理地址的例子； Cache的组织方式和3个例子； Cache的工作原理； 82385的工作原理。 * * Fast page mode?or?FPM?memory is slightly faster than conventional DRAM. While standard DRAM requires that a row and column be sent for each access, FPM works by sending the row address just once for many accesses to memory in locations near each other, improving access time. FPM memory itself is an improved version of its predecessor,?page mode?memory, which is very rarely seen now. Despite its name (fast page mode), FPM is actually the slowest memory technology used in modern PCs. Virtually every PC made in the last several years that is designed to use conventional asynchronous RAM will support FPM, and it is a safe technology choice since using it doesnt require any special compatibility or support. However, it offers lower performance than most other memory technologies. It is also not suitable for high-speed memory buses over 66 MHz, because excessive numbers of?wait states?would have to be added. FPM DRAM typically allows burst system timings as fast as 5-3-3-3 at 66 MHz. * The most common type of asynchronous DRAM used is called?extended data out?or?EDO?memory; sometimes it is also called?hyper page mode?DRAM. It is slightly faster than FPM memory due to another evolutionary tweak in how the memory access works. In simplified terms, EDO memory has had its timing circuits modified so one access to the memory can begin before the last one has finished. It is therefore slightly faster than FPM memory, giving a performance boost of around 3-5% over FPM in most systems. EDO memory has been hyped up a great deal, but in real world performance it offers a minimal speed increase over FPM memory * * A relatively new and different kind of RAM,?Synchronous DRAM?or?SDRAM?differs from earl