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A new method of making ohmic contacts to p-GaN.pdf

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A new method of making ohmic contacts to p-GaN.pdf

Nuclear Instruments and Methods in Physics Research B 388 (2016) 35–40 Contents lists available at ScienceDirect Nuclear Instruments and Methods in Physics Research B journal homepage: /locate/nimb A new method of making ohmic contacts to p-GaN C.A. Hernández-Gutierrez a,?, Yu. Kudriavtsev b, Esteban Mota c, A.G. Hernández b, A. Escobosa-Echavarría b, V. Sánchez-Resendiz b, Y.L. Casallas-Moreno d, M. López-López d a DNyN, Cinvestav-IPN, México, DF, 07360, Mexico b Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360, Mexico c ESIME, Instituto Politécnico Nacional, México, DF, 07738, Mexico d Departamento Física, Cinvestav-IPN, México, DF, 07360, Mexico article info Article history: Received 9 September 2016 Received in revised form 23 October 2016 Accepted 1 November 2016 Available online 10 November 2016 Keywords: Ohmic contact p-GaN Ion-implantation Speci?c contact resistance abstract The structural, chemical, and electrical characteristics of In+ ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In+ ions with an implantation dose of 5 ? 1015 ions/cm2 at room temperature to form a thin layer of InxGa1-xN located at the metalsemiconductor interface, achieved to reduce the speci?c contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by highresolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In+ implantation, and the redistribution of elements. The speci?c contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest speci?c contact resistance of 2.5 ? 10à4 Ocm2 was achieved for Au/Ni/p-InxGa1-xN/p-G