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Characterization of ohmic contacts in polymer organic field-effect transistors.pdf

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Characterization of ohmic contacts in polymer organic field-effect transistors.pdf

Organic Electronics 37 (2016) 491e497 Contents lists available at ScienceDirect Organic Electronics journal homepage: /locate/orgel Characterization of ohmic contacts in polymer organic ?eld-effect transistors Jin-Guo Yang a, c, Wei-Ling Seah a, Han Guo b, Jun-Kai Tan a, Mi Zhou e, Ryosuke Matsubara d, Masakazu Nakamura d, Rui-Qi Png a, Peter K.H. Ho a, **, Lay-Lay Chua a, b, * a Department of Physics, National University of Singapore, Lower Kent Ridge Road, S117542, Singapore b Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, S117543, Singapore c NUS Graduate School for Integrated Sciences Engineering, National University of Singapore, Medical Drive, Singapore S117456, Singapore d Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama, Ikoma 8916-5, Japan e BASF South East Asia Pte Ltd, 7 Temasek Boulevard S038987, Singapore article info Article history: Received 30 October 2015 Received in revised form 15 March 2016 Accepted 24 March 2016 Available online 29 July 2016 Keywords: Contact resistance Organic semiconductors Transfer line method Field-effect transistors Speci?c contact resistance Interface doping abstract It is well known that contact resistance Rc limits the performance of organic ?eld-effect transistors (OFETs) that have high ?eld-effect mobilities (mFET a 0.3 cm2 Và1 sà1) and short channel lengths (Lch ( 30 mm). The usual transfer-line method (TLM) to analyze Rc calls for extrapolation of total resistance to zero Lch at constant drain and gate voltages. This requires an unrealistic assumption that Rc does not vary with sourceàdrain current Isd (nor with channel carrier density s). Here we describe a selfconsistent TLM analysis that instead imposes the condition of constant Isd and s. The results explicitly reveal the dependence of Rc on Isd and s. We further describe how this Rc(Isd, s) surface can be modelled to yield the speci?c contact resistivity rc of the metal/organic semicondu