Detailed analysis and contact properties of low-voltage organic thin-film transistors based on dinaphtho[2,3-b2′,3′-f]thieno[3,2-b]thiophene (DNTT) and its didecyl and diphenyl derivatives.pdfVIP

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Detailed analysis and contact properties of low-voltage organic thin-film transistors based on dinaphtho[2,3-b2′,3′-f]thieno[3,2-b]thiophene (DNTT) and its didecyl and diphenyl derivatives.pdf

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Detailed analysis and contact properties of low-voltage organic thin-film transistors based on dinaphtho[2,3-b2′,3′-f]thieno[3,2-b]thiophene (DNTT) and its didecyl and diphenyl derivatives.pdf

Organic Electronics 35 (2016) 33e40 Contents lists available at ScienceDirect Organic Electronics journal homepage: /locate/orgel Detailed analysis and contact properties of low-voltage organic thin?lm transistors based on dinaphtho[2,3-b:20,30-f]thieno[3,2-b] thiophene (DNTT) and its didecyl and diphenyl derivatives Ulrike Kraft a, b, *, Kazuo Takimiya c, Myeong Jin Kang d, Reinhold Ro€del a, Florian Letzkus e, Joachim N. Burghartz e, Edwin Weber b, Hagen Klauk a a Max Planck Institute for Solid State Research, Stuttgart, Germany b Department of Chemistry, Technical University Bergakademie Freiberg, Germany c Emergent Molecular Function Research Group, RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, Japan d Department of Applied Chemistry, Hiroshima University, Higashi-Hiroshima, Japan e Institute for Microelectronics/IMS Chips, Stuttgart, Germany article info Article history: Received 19 February 2016 Received in revised form 18 April 2016 Accepted 23 April 2016 Available online 12 May 2016 Keywords: Organic ?eld-effect transistors Contact resistance Organic semiconductors Thin-?lm morphology Dinaphthothienothiophene (DNTT) abstract Low-voltage organic thin-?lm transistors (TFTs) based on four different small-molecule semiconductors (pentacene, DNTT (dinaphtho[2,3-b:20,30-f]thieno[3,2-b]thiophene), C10-DNTT and DPh-DNTT) were fabricated, and a detailed comparison of the semiconductor thin-?lm morphology, of the current-voltage characteristics of transistors with channel lengths ranging from 100 to 1 mm, and of the contact re- sistances is provided. The three thienoacene derivatives DNTT, C10-DNTT and DPh-DNTT all have signi?cantly larger charge-carrier mobilities and smaller contact resistances than pentacene. In terms of the intrinsic channel mobility (determined using the transmission line method), C10-DNTT and DPhDNTT perform quite similarly and notably better than DNTT, suggesting that the decyl substituents in C10-DNTT and the phenyl substitue