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GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles.pdf

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GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles.pdf

Nuclear Instruments and Methods in Physics Research A 845 (2017) 52–55 Contents lists available at ScienceDirect Nuclear Instruments and Methods in Physics Research A journal homepage: /locate/nima GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles S.V. Chernykh a,b,n, A.V. Chernykh a, S.I. Didenko a,b, F.M. Baryshnikov a,b, N. Burtebayev b,c, G.I. Britvich d, A.P. Chubenko b,e, V.G. Guly f,1, Yu.N. Glybin f, T.K. Zholdybayev b,c, J.T. Burtebayeva b,c, M. Nassurlla b,c a National University of Science and Technology “MISIS”, Moscow, Russia b Research Institute of Experimental and Theoretical Physics, Almaty, Kazakhstan c Institute of Nuclear Physics, Almaty, Kazakhstan d Institute of High Energy Physics, Protvino, Moscow region, Russia e P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russia f LLC “SNIIP Plus”, Moscow, Russia article info Article history: Received 25 March 2016 Received in revised form 7 June 2016 Accepted 10 June 2016 Available online 11 June 2016 Keywords: Gallium arsenide Chloride vapor phase epitaxy Schottky contact Nuclear detector α-Particles Energy resolution abstract For the ?rst time, samples of particle detectors based on high-purity GaAs epilayers with an active area of 25 and 80 mm2 and an ultra-thin Pt Schottky barrier were fabricated for use in the spectrometry of charged particles and their operating characteristics were studied. The obtained FWHM of 14.2 (for 25 mm2 detector) and 15.5 keV (for 80 mm2 detector) on the 5.499 MeV line of 238Pu is at the level of silicon spectrometric detectors. It was found that the main component that determines the energy resolution of the detector is a ?uctuation in the number of collected electron–hole pairs. This allows us to state that the obtained energy resolution is close to the limit for VPE GaAs. 2017 Elsevier B.V. All rights reserved. 1. Introduction Radiation hard semiconductor detectors are needed in experiments on measurem