Influence of surface-modified Mo back contact on post-selenized Cu(In,Ga)Se2 thin films.pdfVIP

Materials Science in Semiconductor Processing 57 (2017) 227–232 Contents lists available at ScienceDirect Materials Science in Semiconductor Processing journal homepage: /locate/mssp crossmarkIn?uence of surface-modi?ed Mo back contact on post-selenized Cu(In,Ga) Se2 thin ?lms Yunxiang Huang, Yong Tang, Wei Yuan?, Qinghui Wang, Shiwei Zhang Key Laboratory of Surface Functional Structure Manufacturing of Guangdong Higher Education Institutes, South China University of Technology, Guangzhou 510640, China ARTICLE INFO Keywords: CIGS Mo back contact Cu ?lm Crystal growth Microstructure ABSTRACT In this work, the in?uences of surface-modi?ed Mo back contacts on the morphology of Cu layers and quality of Cu(In,Ga)Se2 (CIGS) thin ?lms are investigated. One method of sputtering treatment to modify the Mo surface e?ectively improved the adhesion between the Cu and Mo layers. However, Cu layers electrodeposited on the various modi?ed Mo surfaces created di?erent morphological structures, which impacted the CIGS thin ?lms. First, an alloyed Cu-In-Ga ?lm based on the Cu layer of smooth structure would experience homogeneous element di?usion compared to the Cu layer of the rugged structure. Second, the CIGS ?lm based on the smooth Cu-covered substrate exhibited a uniform surface pro?le with regular crystals, while the CIGS ?lm based on a rugged one exhibited an uneven surface pro?le with several irregular crystals. Additionally, the smooth Cucovered substrate reduced the adverse phase separation of CuInSe2 and CuGaSe2 more e?ectively. 1. Introduction Polycrystalline Cu(In,Ga)Se2 (CIGS) is a well-known solar photovoltaic absorber, but control of the material continues to present materials challenges. Here we report on issues related to material processing when the CIGS is grown on a single Mo thin ?lm, which is the usual back contact [1,2]. While the highest laboratory e?ciencies have been achieved by multi-source co-evaporation [3], industrial production focuses on the potential