Multi-wire metallization for solar cells Contact resistivity of the interface between the wires and In2O3Sn, In2O3F, and ZnOAl layers.pdfVIP

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Multi-wire metallization for solar cells Contact resistivity of the interface between the wires and In2O3Sn, In2O3F, and ZnOAl layers.pdf

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Multi-wire metallization for solar cells Contact resistivity of the interface between the wires and In2O3Sn, In2O3F, and ZnOAl layers.pdf

Solar Energy 142 (2017) 330–339 Contents lists available at ScienceDirect Solar Energy journal homepage: /locate/solener Multi-wire metallization for solar cells: Contact resistivity of the interface between the wires and In2O3:Sn, In2O3:F, and ZnO:Al layers G.G. Untila ?, T.N. Kost, A.B. Chebotareva Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, 119991 Moscow, Russia article info Article history: Received 21 July 2016 Received in revised form 1 December 2016 Accepted 21 December 2016 Available online 2 January 2017 Keywords: Silicon solar cells Transparent conductive oxide Metallization Multi-wire design Ag/cost reduction Speci?c contact resistance Transmission line method abstract Replacing expensive silver with inexpensive copper for the metallization of silicon wafer solar cells can lead to substantial reductions in material costs associated with cell production. A promising approach is the use of multi-wire design. This technology uses many wires in the place of busbars, and the copper wires are ‘‘soldered” during the low-temperature lamination process to the ?ngers (printed or plated) or to the transparent conductive oxide (TCO) layer, e.g. in the case of the a-Si/c-Si heterojunction cells. We have studied the effects of Si surface morphology (textured or planar) and TCO resistivity (q) on the contact resistivity (qC) between wires and TCO (In2O3:Sn (ITO), In2O3:F (IFO), and ZnO:Al (AZO)) layers grown on silicon substrates by ultrasonic spray pyrolysis. To determine qC by transmission line model (TLM) measurements, we have developed a specialized TLM test structure which takes into account speci?cs of laminated contacts. It has been shown that, if the longitudinal resistance of the wires is left out of account, the error in qC determined by TLM measurements may reach tens or hundreds of percent or even more. To eliminate such errors, we have adjusted the TLM measurement procedure. The present results demonstrate the following: (i)