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Nanocrack formation in AlGaNGaN high electron mobility transistors utilizing TiAlNiAu ohmic contacts.pdf

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Nanocrack formation in AlGaNGaN high electron mobility transistors utilizing TiAlNiAu ohmic contacts.pdf

Microelectronics Reliability 70 (2017) 41–48 Contents lists available at ScienceDirect Microelectronics Reliability journal homepage: /locate/microrel Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts P.G. Whiting a,?, N.G. Rudawski a, M.R. Holzworth a, S.J. Pearton a, K.S. Jones a, L. Liu b, T.S. Kang b, F. Ren b a Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400, United States b Department of Chemical Engineering, University of Florida, Gainesville, FL 32611-6005, United States article info Article history: Received 25 June 2014 Received in revised form 7 February 2017 Accepted 7 February 2017 Available online 13 February 2017 Keywords: AlGaN/GaN High electron mobility transistor Failure analysis Fib/SEM Tem Alloyed contacts abstract AlGaN/GaN HEMTs are poised to become the technology of choice in RF and power electronics applications where high operating frequencies and high breakdown voltages are required. The alloyed contacting scheme utilized in the formation of the source and drain contacts of these devices affects the conduction of electrons through the 2DEG from the moment of ohmic contact formation onward to operation in the ?eld. Analysis of the ohmic contacts of as-fabricated and electrically stressed AlGaN/GaN HEMTs, via chemical deprocessing and Scanning Electron Microscopy, indicates the presence of cracks oriented along the [11-20] directions, which nucleate at metal inclusions present under the alloyed ohmic source/drain contact metal. Cracks which form at the edges of these contact regions can extend into the channel region. It appears that electrical biasing induces additional growth in the longest cracks present within the channel regions of these devices. ? 2017 Elsevier Ltd. All rights reserved. 1. Introduction High Electron Mobility Transistors based on Aluminum Gallium Nitride/Gallium Nitride heterostructures (AlGaN/GaN HEMTs) are poised t