Passivating contacts for silicon solar cells based on boron-diffused recrystallized amorphous silicon and thin dielectric interlayers.pdfVIP

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Passivating contacts for silicon solar cells based on boron-diffused recrystallized amorphous silicon and thin dielectric interlayers.pdf

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Passivating contacts for silicon solar cells based on boron-diffused recrystallized amorphous silicon and thin dielectric interlayers.pdf

Solar Energy Materials Solar Cells 152 (2016) 73–79 Contents lists available at ScienceDirect Solar Energy Materials Solar Cells journal homepage: /locate/solmat Passivating contacts for silicon solar cells based on boron-diffused recrystallized amorphous silicon and thin dielectric interlayers Di Yan, Andres Cuevas, Yimao Wan, James Bullock Research School of Engineering, College of Computer Science and Engineering, The Australian National University, Canberra 0200, Australia article info Article history: Received 18 December 2015 Received in revised form 25 February 2016 Accepted 24 March 2016 Available online 7 April 2016 Keywords: Boron Amorphous silicon Polysilicon Passivated contact Solar cell abstract A technique to make poly-Si (p t)/SiOx contacts for crystalline silicon solar cells based on doping PECVD intrinsic amorphous silicon (a-Si) by means of a thermal BBr3 diffusion process is demonstrated. The thickness of the a-Si layer and the temperature of the boron diffusion are optimized in terms of suppressing carrier recombination and transport losses. Different interfacial layers are studied, including ultra-thin SiOx grown either chemically or thermally, and stacks of SiOx and SiNx. While the double SiOx/ SiNx interlayers do not achieve the desired performance, both kinds of single SiOx layers produce satisfactory passivating contacts, with both a low recombination current and a low contact resistivity. By adjusting the boron diffusion temperature, recombination current parameter J0 values of $16 fA/cm2 to $ 30 fA/cm2 have been obtained for structures with initial a-Si thicknesses of 36–46 nm, together with a contact resistivity of $ 8 mΩ cm2. 2016 Elsevier B.V. All rights reserved. 1. Introduction Recombination at the interface between metal and silicon eventually limits the maximum attainable ef?ciency of conventional dopant-diffused silicon solar cells. Besides restricting the contact area and introducing a heavily doped region under the metal, plac