Photocurrent spectra of semi-insulating GaAs M–S–M diodes Role of the contacts.pdfVIP

下载本文档

5
0
约3.51万字
约 6页
2017-03-16 发布于天津
举报
版权申诉

Photocurrent spectra of semi-insulating GaAs M–S–M diodes Role of the contacts.pdf

1、本文档共6页，可阅读全部内容。
2、原创力文档（book118）网站文档一经付费（服务费），不意味着购买了该文档的版权，仅供个人/单位学习、研究之用，不得用于商业用途，未经授权，严禁复制、发行、汇编、翻译或者网络传播等，侵权必究。
3、本站所有内容均由合作方或网友上传，本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺！文档内容仅供研究参考，付费前请自行鉴别。如您付费，意味着您自己接受本站规则且自行承担风险，本站不退款、不进行额外附加服务；查看《如何避免下载的几个坑》。如果您已付费下载过本站文档，您可以点击这里二次下载。
4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等，请点击“版权申诉”（推荐），也可以打举报电话：400-050-0827(电话支持时间：9:00-18:30)。
5、该文档为VIP文档，如果想要下载，成为VIP会员后，下载免费。
6、成为VIP后，下载本文档将扣除1次下载权益。下载后，不支持退款、换文档。如有疑问请联系我们。
7、成为VIP后，您将拥有八大权益，权益包括：VIP文档下载权益、阅读免打扰、文档格式转换、高级专利检索、专属身份标志、高级客服、多端互通、版权登记。
8、VIP文档为合作方或网友上传，每下载1次，网站将根据用户上传文档的质量评分、类型等，对文档贡献者给予高额补贴、流量扶持。如果你也想贡献VIP文档。上传文档

Photocurrent spectra of semi-insulating GaAs M–S–M diodes Role of the contacts.pdf

Solid-State Electronics 118 (2016) 30–35 Contents lists available at ScienceDirect Solid-State Electronics journal homepage: /locate/sse Photocurrent spectra of semi-insulating GaAs M–S–M diodes: Role of the contacts Franti?ek Dubecky′ a,?, Jirˇí Oswald b, Dobroslav Kindl b, Pavel Hubík b, Matú? Dubecky′ c, Enos Gombia d, Andrea ?agátová e, Pavol Bohácˇek a, Mária Sekácˇová a, Vladimír Necˇas e a Institute of Electrical Engineering, SAS, Dúbravská cesta 9, SK-84104 Bratislava, Slovakia b Institute of Physics, ASCR, v.v.i., Cukrovarnická 10, CZ-16200 Praha 6, Czech Republic c Department of Physics, Faculty of Science, University of Ostrava, 30. dubna 22, CZ-70103 Ostrava 1, Czech Republic d C.N.R.-IMEM Institute, Parco Area delle Scienze 37/A, I-43124 Parma, Italy e Faculty of Electrical Engineering and Information Technology, SUT, Ilkovicˇova 3, SK-81219 Bratislava, Slovakia article info Article history: Received 17 August 2015 Received in revised form 22 December 2015 Accepted 7 January 2016 Available online 23 January 2016 Keywords: Photocurrent spectroscopy Semi-insulating GaAs Detectors Contacts abstract Current–voltage (I–V) characteristics and photocurrent (PC) spectra (600–1000 nm) of the metal–semi conductor–metal (M–S–M) structures based on high-quality undoped semi-insulating (SI) GaAs with AuGeNi backside contact and different semitransparent top contacts (AuGeNi, Pt, Gd and Nd) are reported, and analysed with the help of a simple physical model. It is shown that the dominant peak in the PC spectra and the change of photocurrent sign can be explained by a presence of two Schottky-like barriers at the top and bottom surfaces. In addition, I–V and PC results show dependence on the bias and its polarity, and on the contact metal used. The possible origins of these effects are discussed. ó 2016 Elsevier Ltd. All rights reserved. 1. Introduction Semi-insulating (SI) GaAs has become an important candidate for the fabrication of monolithic X-ray and particle det