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Transport property improvements of amorphous In–Zn–O transistors with printed Cu contacts via rapid temperature annealing.pdf

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Transport property improvements of amorphous In–Zn–O transistors with printed Cu contacts via rapid temperature annealing.pdf

Thin Solid Films 603 (2016) 268–271 Contents lists available at ScienceDirect Thin Solid Films journal homepage: /locate/tsf Transport property improvements of amorphous In–Zn–O transistors with printed Cu contacts via rapid temperature annealing Ju Yeon Won a, Young Hun Han a, Hyun Ju Seol b, Ki June Lee b, Rino Choi a, Jae Kyeong Jeong b,? a Department of Materials Science and Engineering, Inha University, Incheon 402-751, South Korea b Department of Electronic Engineering, Hanyang University, Seoul 133-791, South Korea article info Article history: Received 4 December 2015 Received in revised form 16 February 2016 Accepted 17 February 2016 Available online 20 February 2016 Keywords: Printed contacts Copper Rapid temperature annealing Indium–zinc–oxide Semiconductor Tantalum Diffusion barrier Thin-?lm transistors abstract The device performance of amorphous In–Zn–O (a-IZO) thin-?lm transistors (TFTs) with printed Cu contacts was signi?cantly improved by the insertion of a diffusion barrier Ta layer and rapid thermal process (RTP) annealing. Furnace-annealed a-IZO TFTs with Cu/Ta contacts exhibited mobility values of 21.3 cm2/Vs, subthreshold gate swing (SS) values of 1.9 V/decade, and ION/OFF of ~ 106. In contrast, the SS, mobility, and ION/OFF ratio of RTPannealed a-IZO TFTs with Cu/Ta contacts were 30.6 cm2/Vs, 0.68 V/decade, and 3 × 107, respectively. We attributed the performance improvement of devices with Cu/Ta contacts to the suppression of Cu in-diffusion within the a-IZO channel due to the rapid heating associated with RTP annealing. ? 2016 Elsevier B.V. All rights reserved. 1. Introduction Amorphous oxide semiconductor (AOS) thin-?lm transistors (TFTs) are widely used as pixel drivers for advanced active-matrix liquid crystal displays and organic light-emitting displays due to reasonable mobility values of ~10 cm2/Vs, good substrate size scalability, and extremely low leakage currents [1–2]. The RC delay time for backplane electronics must be aggressivel