场效应管9435.docVIP

场效应管9435 SSM9435 P-Channel Enhancement Mode MOSFET Product Summary Product Summary VDS (V) ID (A) -30V -5.5A RDS(ON) (mΩ) Max 55 @VGS = -10V 85 @VGS = -4.5V South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea SemiconductorAugust 2005 (Rev 2.0) 1 of 71 of 7 ABSOLUTE MAXIMUM RATINGS (TABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) = 25 C unless otherwise noted) THERMAL CHARACTERISTICSTHERMAL CHARACTERISTICS ParameterSymbol Limit Unit o Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal ResistanceJunction-to-Ambient o a a a b VDS VGS ID IDM IS PD TJTSTG R?JA -30 V V A A A C/W W C o o 20-+ -5.5 -27 -1.7 2.5 -55 to 150 50 SO-8 D (5678) G (4) S(123) FEATURES ??Super high dense cell design for low RDS(ON). ??Rugged and reliable. ??Surface Mount package. 1 2 3 4 5 6 7 8 换页 SSM9435 South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea SemiconductorAugust 2005 (Rev 2.0) 2 of 9 P-Channel Electrical Characteristics (TP-Channel Electrical Characteristics (TA = 25 C unless otherwise noted) = 25 C unless otherwise noted) o Unit Symbol Parameter Condition Min Typ Max c Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance BVDSS IDSS IGSS VGS(th) RDS(ON) VGS=0VID=-250 ?A VDS=-24VVGS=0V VGS=?20VVDS=0V VDS=VGS ID=-250?A VGS=-10VID=-5.5A VGS=-4.5VID=-4.2A m? V V ?A nA -30 -1 ?100 -2.5 55 85 -1 45 75 On-State Drain Current Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ID(ON) gFS tD(ON) tr tD(OFF) tf VDS=-5VVGS=-10V VDS=-5VID=-5.5A VDD=-15V VGEN=-10V RL=15? -20 5 10 36 25 10 ns PF S A In