Magnetic sensors and logic gates.pptVIP

Outline Anisotropic magnetoresistive sensors Giant magnetoresistive sensors Colossal magnetoresistive sensors Using magnetoresistive elements to build up logic gates Hall sensors and devices Conventional Vs. Magnetic sensing Magnetic sensor technology field ranges Anisotropic magnetoresistive (AMR) sensor AMR sensor circuit Giant magnetoresistive (GMR) sensor GMR circuit technique Obtaining parallel, antiparallel magnetic alignment pinned sandwiches Consist of two magnetic layers, soft layer and hard layer Antiferromagnetic multilayers Consist of muliple repetitions of alternating magnetic and nonmagnetic layers The polarized conduction electrons cause antiferromagnetic coupling between magnetic layers Spin valves An additional layer of an antiferromagnetic material is provided on the top or bottom Antiferromagnetic multilayers Use GMR in hard drive read head Parameters for GMR sensor Magnetic layers: 4~6 nm Conductor layer 3~5 nm in sandwich structure This thickness is critical in antiferromagnetic multilayer GMR sensors, typically 1.5~2 nm Switching field 3~4 KA/m (35~50 Oe) for sandwich structure and 250 for multilayer structures Magnetic tunnel junction (MTJ) Use MR element as logic gates AND gate OR gate and NAND, NOR gates Advantages of MR element A single MR element is sufficient to realize and store four basic logic functionalities. Integration density is increased. The output is non-volatile and repeatedly readable without refreshing, which reduces the heat evolution. Fast operation: the switching of frequency of magnetic films can be pushed to several GHZ. Low power consumption. Colossal magnetoresistive (CMR) and extraordinary magnetoresistive (EMR) Under certain conditions, mixed oxides undergo a semiconductor to matallic transition with the application of an external magnetic field. Hall sensor Hybrid hall effect devices Magnetic p-n junction EE698A Advanced Electron Devices Magnetic sensors and logic gates Ling Zhou EE698A The output of conventio