LB法制备的P(VDF-TrFE)共聚物薄膜其光学和电学特性研究.pdfVIP

第29卷第6期 2010年12月 红外与毫米波学报 J．Infrared Millim．Waves V01．29，No．6 December，2010 文章编号：1001—9014(2010)06一0406—05 OPTICAL AND ELECTRIC PROPERTIES oF POLY(VINYLIDENE FLUORIED— TRIFLUOROETHYLENE)THIN FILM BY LANGMUIR··BLODGETT TECHNIQUE WANG Jian-Lu，MENG Xiang—Jian，·GAO Yan-Qing，HUANG Zhi—Ming， SHEN Hong，SUN Jing—Lan，CHU Jan-Hao (National Laboratory for Infrared Physics，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China) Abstract：Poly(vinylidene fluoride·trifluoroethylene)(P(VDF—TrFE))thin films were deposited on polyimide substrate U· sing horizontal Langmuir-Blodgett(LB)technology．X—ray diffractions indicate that the films have good crystallinity with (1 10)preferential orientation for films with different thickness．The optical dispersion of the films were measured by varia． ble—angle spectroscopic ellipsometry．ne data缈and A at muhiple incident angels(0=75。and 85。)were fitted using the Cauchy model．The refractive index．extinction coeffieient。absorption coefficient and thickness of each film were obmined． The ferroeleetrie of the films were studied．The remnant polarization iS uD to 6．3ixC／cm2．The coercive field is 100MV／ cm．The dielectric measurement for the film shows two distinctive phase transitions．ferroelectric-paraeleetric phase transi— tion and 13 relaxation． Key words：Langmuir-Blodgett technology；P(VDF-TrFE)films；spectroscopic ellipsometry；electric property CLC number：PM22+l Document：A LB法制备的P(VDF-TrFE)共聚物薄膜其光学和电学特性研究 王建禄， 孟祥建， 高艳卿， 黄志明， 沈 宏， 孙琛兰， 褚君浩 (中国科学院上海技术物理研究所，红外物理国家重点实验室，上海200083) 摘要：运用郎缪尔．布尔吉特法在聚酰亚胺衬底上制备聚偏氟乙烯及三氟乙烯(P(VDF．TrFE))共聚物薄膜．不同厚 度薄膜的X射线衍射结果表明，薄膜具有良好的结晶特性，取向为(110)．运用波长范围为300—1300nm的椭圆偏 振光谱仪对薄膜光学特性进行了表征；运用Cauchy模型对不同角度(0=750和85。)测得的哕和△数据进行了拟 合．获得了P(VDF．TrFE)薄膜的光学参数n，k，a以及薄膜的厚度．另外对薄膜的铁电性质的测量，其剩余极化达 到了6．31山C／em2，矫顽电场为lOOMV／cm．介电测量得到了薄膜两个明显的相变，铁电一介电相变以及口弛豫． 关键词：LB技术；P(VDF．TrFE)薄膜；椭圆偏振光谱；电学特性 Introduction The polymers based on polyvinylidene fluoride (PVDF)have attracted attention of many research groups for their fer