毕业论文隙带电压基准的设计.docVIP

摘 要 基准电压源是模拟电路设计中广泛采用的一个关键的基本模块。所谓基准电压源就是能提供高稳定度基准量的电源，这种基准源与电源、工艺参数和温度的关系很小，但是它的温度稳定性以及抗噪性能影响着整个电路系统的精度和性能。本文的目的便是设计一种基于CMOS带隙基准电压源。 本文首先介绍了基准电压源的国内外发展现状及趋势。然后详细介绍了MOS器件的基本原理、基准电压源电路原理，并对不同的带隙基准源结构进行了比较。基准电压电路设计，h05mixddst02v13库中的阈值电压、沟道长度调制系数、跨导参数进行提取，对衬底pnp管的温度特性进行分析，再对电路中的各个管子电容、电阻值。模拟和仿真结果表明，电路实现了良好的温度特性，0℃～100℃温度范围内，基准电压温度系数大约为0.25mV/℃，。 关键词MOS器件；带隙基准电压源；温度系数；； Abstract The reference voltage source is a vital basic module is widely used in analog circuit design. The reference voltage source is able to provide high stability reference amount of power, the reference source and power supply, process parameters and the temperature is very small, but its temperature stability and anti-noise performance affects the precision and performance of the whole system. The purpose of this paper is the design of a CMOS bandgap voltage reference based on. This paper first introduces the present situation and development trend of voltage reference at home and abroad. And then introduces the basic principle of MOS device, reference voltage source circuit principle, and the bandgap structure were compared with different. In the bandgap voltage reference circuit design, first on the threshold voltage, the h05mixddst02v13 Library of the channel length modulation coefficient, transconductance parameter extraction, analysis of temperature characteristics of a substrate of PNP pipe, the pipe of each circuit in the ratio of width to length, capacitance, resistance value for manual calculation, finally the circuit was simulated by Hspice software. Simulation results show that, circuit has good temperature performance, 0 ℃ ~ 100 ℃ temperature range, the temperature coefficient of the reference voltage is about 0.25mV/ ℃, the output voltage is 1.0V. Keywords: MOS device; bandgap voltage reference; extraction; output voltage temperature coefficient; 目录 0 前言 1 1 MOS器件原理 3 1.1基本概念 3 1.1.1 MOSFET的结构 3 1.2 MOS的I/V特性 4 1.2.1 阈值电压 4 1.3 二级效应 5 1.3.1 体效应 5 1.