硅通孔_TSV_转接板微组装技术研究进展_刘晓阳.pdfVIP

第15卷第8期 - 1 - 电　子　与　封　装 ELECTRONICS PACKAGING ，第8期 Vo l . 1 5，N o . 8 总 第148期 2015年8月 硅通孔（TSV）转接板微组装技术研究进展* 刘晓阳1，刘海燕2，于大全3，吴小龙1，陈文录1 （1. 江南计算技术研究所，江苏 无锡 214083； 2. 华进半导体封装先导技术研发中心有限公司，江苏 无锡 214135； 3. 中国科学院微电子研究所，北京 100029） 摘　要：以硅通孔（TSV）为核心的三维集成技术是半导体工业界近几年的研发热点，特别是2.5D TSV转接板技术的出现，为实现低成本小尺寸芯片系统封装替代高成本系统芯片（SoC）提供了解 决方案。转接板作为中介层，实现芯片和芯片、芯片与基板之间的三维互连，降低了系统芯片制作 成本和功耗。在基于TSV转接板的三维封装结构中，新型封装结构及封装材料的引入，大尺寸、高 功率芯片和小尺寸、细节距微凸点的应用，都为转接板的微组装工艺及其可靠性带来了巨大挑战。 综述了TSV转接板微组装的研究现状，及在转接板翘曲、芯片与转接板的精确对准、微组装相关材 料、工艺选择等方面面临的关键问题和研究进展。 关键词：硅通孔（TSV）；转接板；微组装技术；基板；2.5D/3D集成 中图分类号：TN305.94 　 文献标识码：A　　 文章编号：1681-1070（2015）08-0001-08 Development of Micropackage Technology for Through Silicon Via (TSV) Interposer LIU Xiaoyang1, LIU Haiyan2, YU Daquan3, WU Xiaolong1, CHEN Wenlu1 （1. Jiangnan Institute of Computing Technology, Wuxi 214083, China; 2. National Center for Advanced Packaging, Wuxi 214135, China; 3. Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China） Abstract: In recent years, 3D integration technology with the key technology of through silicon via (TSV) has been a research and development hotspot of semiconductor industry. Especially, 2.5D TSV interposer technology has been provided a solution for substituting low cost small size die system package for high cost system on chip (SOC). As the medilayer, interposer achieves 3D interconnection between die to die and die to substrate, and has reduced the cost of system on chip and power consumption. In the structure of 3D package based on TSV interposer, there have been very huge challenges for micropackage technology and reliability of interposer, with new type package structures and materials introduced, and with large size high power die and small size fine pitch microbumps applied. In the paper, the currently research of TSV interposer micropackage was summarized, including the key questions and development of warpage of interposer, pinpoint between die and interposer, materials of micr