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DTD123YKT146;中文规格书,Datasheet资料.pdf

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DTD123YKT146;中文规格书,Datasheet资料

Datasheet ? 2012 ROHM Co., Ltd. All rights reserved. DTD123YK NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types :DTB123YK 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Parameter Value SMT3 VCC 50V IC(MAX.) 500mA R1 2.2kW R2 10kW Tape width (mm) Basic ordering unit (pcs) Marking DTD123YK SMT3 2928 T146 180 8 3,000 F62 Part No. Package Package size (mm) Taping code Reel size (mm) OUT IN GND DTD123YK SOT-346 (SC-59) 1/5 2012.07 - Rev.D / ? 2012 ROHM Co., Ltd. All rights reserved. Data SheetDTD123YK lAbsolute maximum ratings (Ta = 25°C) Supply voltage Input voltage Collector current Power dissipation Junction temperature Range of storage temperature lElectrical characteristics(Ta = 25°C) *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint VIN -5 to +12 V IC *1 500 mA Parameter Symbol Values Unit VCC 50 V Conditions Min. Typ. mW Tj 150 °C Tstg -55 to +150 °C PD *2 200 Max. Unit Input voltage VI(off) VCC = 5V, IO = 100mA - - V VI(on) VO = 0.3V, IO = 20mA 2.0 - - 0.3 Parameter Symbol V Input current II VI = 5V - - 3.6 mA Output voltage VO(on) IO / II = 50mA / 2.5mA - 0.1 0.3 mA DC current gain GI VO = 5V, IO = 50mA 56 - - - Output current IO(off) VCC = 50V, VI = 0V - - 0.5 kW Resistance ratio R2/R1 - 3.6 4.5 5.5 - Input resistance R1 - 1.54 2.2 2.86 MHzTransition frequency fT *

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