IRGP4072DPBF;中文规格书,Datasheet资料.pdf

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGP4072DPbF
 1 04/16/08 E G n-channel C VCES = 300V IC = 40A, TC = 100°C VCE(on) typ. = 1.46V Features ? Low VCE (ON) Trench IGBT Technology ? Low switching losses ? Maximum Junction temperature 150 °C ? Square RBSOA ? 100% of the parts tested for clamped inductive load ? Ultra fast soft Recovery Co-Pak Diode ? Tight parameter distribution ? Lead Free Package Benefits ? High Efficiency in a wide range of applications ? Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses ? Rugged transient Performance for increased reliability ? Low EMI G C E Gate Collector Emitter G C E TO-247AC C Applications ? Uninterruptible Power Supplies ? Battery operated vehicles ? Welding ? Solar converters and inverters Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 300 V IC @ TC = 25°C Continuous Collector Current 70 IC @ TC = 100°C Continuous Collector Current 40 ICM Pulse Collector Current 120 ILM Clamped Inductive Load Current 120 A IF @ TC = 25°C Diode Continous Forward Current 70 IF @ TC = 100°C Diode Continous Forward Current 40 IFM Diode Maximum Forward Current
120 VGE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 180 W PD @ TC = 100°C Maximum Power Dissipation 71 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.70 °C/W RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.87 RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 ––– / IRGP4072DPbF 2 Notes:
VCC = 80% (VC