UMH11NTN;中文规格书,Datasheet资料.pdfVIP

Datasheet ? 2012 ROHM Co., Ltd. All rights reserved. EMH11 / UMH11N / IMH11A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing lInner circuit of the input. They also have the advantage of completely eliminating parasitic effects. 5) Only the on/off conditions need to be set for operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. lApplication Inverter circuit, Interface circuit, Driver circuit lPackaging specifications EMT6 UMT6 SMT6 3,000 H11 UMH11N UMT6 2021 TR 180 8 SMT6 2928 T108 180 8 8,000 H118 Tape width (mm) Basic ordering unit (pcs) Marking Reel size (mm) EMH11 EMT6 1616 T2R 180 3,000 H11 IMH11A Part No. Package Package size (mm) Taping code Parameter Tr1 and Tr2 VCC 50V IC(MAX.) 100mA R1 10kW R2 10kW EMH11 (SC-107C) IMH11A SOT-457 (SC-74) UMH11N SOT-353 (SC-88) OUT (6) (2) IN (1) GND (3) OUT IN (5) GND (4) OUT (4) (2) IN (3) GND (1) OUT IN (5) GND (6) EMH11 / UMH11N IMH11A (6) (5) (4) (1) (2) (3) (4) (5) (6) (3) (2) (1) (6) (5) (4) (1) (2) (3) 1/7 2012.06 - Rev.B / ? 2012 ROHM Co., Ltd. All rights reserved. Data SheetEMH11 / UMH11N / IMH11A lAbsolute maximum ratings (Ta = 25°C) For Tr1 and Tr2 in common Supply voltage Input voltage Output current Collector current Power dissipation Junction temperature Range of storage temperature lElectrical characteristics(Ta = 25°C) For Tr1 and Tr2 in common *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element