AOD4132替代型号DMTH3004LK3.docx

30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Features  Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications ? Power Management Functions ? DC-DC Converters ? Backlighting  ? Low On-Resistance ? Low Input Capacitance ? Lead-Free Finish; RoHS Compliant (Notes 1 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to AEC-Q101 Standards for High Reliability Mechanical Data ? Case:TO252 ? Case Material: Molded Plastic, “Green” Molding Compound. ? UL Flammability Classification Rating 94V-0 ? Moisture Sensitivity: Level 1 per J-STD-020 ? Terminal Connections: See Diagram ? Terminals: Matte Tin Finish. Solderable per MIL-STD-202, Method 208 ? Weight: 0.315 grams (Approximate)  Top View Pin Out Top View Equivalent Circuit  Ordering Information (Note 4) Part Number Case Packaging DMTH3004LK3-13 TO252 2500/Tape Reel Notes: 1. EU Directive 2002/95/EC (RoHS) 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See /quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, Green and Lead-free. 3. Halogen- and Antimony-free Green” products are defined as those which contain 900ppm bromine, 900ppm chlorine (1500ppm total Br + Cl) and 1000ppm antimony compounds. 4. For packaging details, go to our website at /products/packages.html. Marking Information =Manufacturer’s Marking H3004L = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 = 2015) WW = Week Code (01 to 53)  Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS - - 10 μA VDS = 24V, VGS = 0V Gate-Source Leakag