AON6508规格书.pdf

AON6508 30V N-Channel AlphaMOS General Description Product Summary V DS I D (at V GS =10V) 32A R DS(ON) (at V GS =10V) 3.2m? R DS(ON) (at V GS = 4.5V) 5m? Application 100% UIS Tested 100% R g Tested Symbol V DS V GS Maximum UnitsParameter 30V Drain-Source Voltage ? Latest Trench Power AlphaMOS (αMOS LV) technology ? Very Low RDS(on) at 4.5V GS ? Low Gate Charge ? High Current Capability ? RoHS and Halogen-Free Compliant ? DC/DC Converters in Computing, Servers, and POL ? Isolated DC/DC Converters in Telecom and Industrial Absolute Maximum Ratings T A =25°C unless otherwise noted V±20Gate-Source Voltage V30 G D S Top View 1 2 3 4 8 7 6 5 PIN1 DFN5X6 Top View Bottom View I DM I AS E AS V DS Spike V SPIKE T J , T STG Symbol t ≤ 10s Steady-State Steady-State RθJC V W T A =70°C 2.7 T A =25°C 4.2 100ns 36 °C/W °C/WMaximum Junction-to-Ambient A D 2.6 64 3Maximum Junction-to-Case I D Power Dissipation A P DSM W 16TC=100°C P D 41TC=25°C Power Dissipation B Continuous Drain Current G I DSM 32 25 T C =25°C T C =100°C Max 46 Avalanche energy L=0.05mH C Avalanche Current C 23 Junction and Storage Temperature Range 53 Continuous Drain Current TA=70°C A 128 °C Thermal Characteristics Pulsed Drain Current C 29 A T A =25°C -55 to 150 A mJ Maximum Junction-to-Ambient A °C/W RθJA 24 53 30 UnitsParameter Typ Rev0: Aug 2011 Page 1 of 6 AON6508 Symbol Min Typ Max Units BV DSS 30 V V DS =30V, V GS =0V 1 T J =55°C 5 I GSS 100 nA V GS(th) Gate Threshold Voltage 1.2 1.8 2.2 V 2.6 3.2 T J =125°C 3.6 4.5 3.6 5 m? g FS 105 S V SD 0.7 1 V I S 48 A C iss 2010 pF C oss 898 pF C rss 124 pF R g 0.9 1.8 2.7 ? Q g (10V) 36 49 nC Q g (4.5V) 17 23 nC Q gs 6 nC Q gd 8 nC t D(on) 7.5 ns t r 4.0 ns t 37.0 ns V DS =0V, V GS = ±20V I S =1A,V GS =0V Maximum Body-Diode Continuous Current Diode Forward Voltage V GS =4.5V, I D =20A V GS =10V, I D =20A Input Capacitance DYNAMIC PARAMETERS Drain-Source Breakdown Voltage Electrical Characteristics (T J =2