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CS5N20A4 IRFR220 FQD5N20 STD5N20 天玖隆科技.pdf

CS5N20A4 IRFR220 FQD5N20 STD5N20 天玖隆科技.pdf

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CS5N20A4 IRFR220 FQD5N20 STD5N20 天玖隆科技

Silicon N-Channel Power MOSFET CS5N20A4 P a g e 1 o f 1 0 2011 ○RHuajing Discrete Devices General Description: CS5N20A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.. Features: Fast Switching Low ON Resistance(Rdson≤0.65?) Low Gate Charge (Typical Data:7nC) Low Reverse transfer capacitances(Typical:8pF) 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 200 V Continuous Drain Current 4.8 A ID Continuous Drain Current TC = 100 °C 3.4 A IDM a1 Pulsed Drain Current 19.2 A VGS Gate-to-Source Voltage ±30 V EAS a2 Single Pulse Avalanche Energy 125 mJ EAR a1 Avalanche Energy ,Repetitive 12 mJ IAR a1 Avalanche Current 1.6 A dv/dt a3 Peak Diode Recovery dv/dt 5 V/ns Power Dissipation 40 W PD Derating Factor above 25°C 0.32 W/℃ TJ,Tstg Operating Junction and Storage Temperature Range 150,–55 to 150 ℃ TL MaximumTemperature for Soldering 300 ℃ VDSS 200 V ID 4.8 A PD (TC=25℃) 40 W RDS(ON)Typ 0.49 ? IRFR220TR.FQD5N20.STD5N20 P a g e 2 o f 1 0 2011 ○R CS5N20A4Huajing Discrete Devices Electrical Characteristics(Tc= 25℃ unless otherwise specified): OFF Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250μA 200 -- -- V ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.26 -- V/℃ VDS

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