DTS7001品牌授权规格书.pdfVIP

P-Channel 60 V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET ? Power MOSFET ? High-Side Switching ? Low On-Resistance: 5 ? ? Low Threshold: - 2 V (typ.) ? Fast Swtiching Speed: 20 ns (typ.) ? Low Input Capacitance: 20 pF (typ.) ? 1200 V ESD Protection ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. ? Battery Operated Systems ? Power Supply Converter Circuits ? Solid-State Relays BENEFITS ? Ease in Driving Switches ? Low Offset (Error) Voltage ? Low-Voltage Operation ? High-Speed Circuits ? Easily Driven without Buffer Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. PRODUCT SUMMARY V DS (V) R DS(on) (?) V GS(th) (V) I D (mA) - 60 5 at V GS = - 10 V - 1 to - 3 - 130 ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current a T A = 25 °C I D - 130 mATA = 100 °C - 105 Pulsed Drain Current b I DM - 800 Power Dissipation a T A = 25 °C P D 350 mW T A = 100 °C 140 Maximum Junction-to-Ambient a R thJA 350 °C/W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C S G D P-Channel MOSFET G TO-236 (SOT-23) S D Top View 2 3 1 DTS 01 1 DTS7001 Notes: a. Pulse test: PW ? 300 μs duty cycle ? 2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS T A = 25 °C, unless otherwise noted Parameter Symbol Test Conditi