FDN336P规格书.pdfVIP

November 1998 FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features Absolute Maximum Ratings TA = 25 oC unless other wise noted Symbol Parameter FDN336P Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V ID Drain Current - Continuous -1.3 A - Pulsed -10 PD Maximum Power Dissipation (Note 1a) 0.5 W (Note 1b) 0.46 TJ,TSTG Operating and Storage Temperature Range -55 to +150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W FDN336P Rev.C -1.3 A, -20 V. RDS(ON) = 0.20 ? @ VGS = -4.5 V RDS(ON) = 0.27 ? @ VGS= -2.5 V. Low gate charge (3.6 nC typical). High performance trench technology for extremely low RDS(ON). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable e