IPP60R190C6_2_1.pdfVIP

Industr ia l Mul t imarket Data Sheet Rev. 2.1, 2010-02-09 Final CoolMOS C6 600V CoolMOS? C6 Power Transistor IPx60R190C6 MOSFET Metal Oxide Semiconductor Field Effect Transistor drain pin 2 gate pin 1 source pin 3 600V CoolMOS? C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 Final Data Sheet 2 Rev. 2.1, 2010-02-09 1 Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS? C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features ? Extremely low losses due to very low FOM Rdson*Qg and Eoss ? Very high commutation ruggedness ? Easy to use/drive ? JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) J-STD20 and JESD22 Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 0.19 Qg,typ 63 nC ID,pulse 59 A Eoss @ 400V 5.2 μJ Body diode di/dt 500 A/μs Type / Ordering Code Package Marking Related Links IPW60R190C6 PG-TO247 IFX C6 Product Brief IPB60R190C6 PG-TO263 IFX C6 Portfolio IPI60R190C6 PG-TO262 6R190C6 IFX CoolMOS Webpage IPP60R190C6 PG-TO220 IFX Design tools IPA60R190C6 PG-TO220 FullPAK 600V CoolMOS? C6 Power Transistor IPx60R190C6 Table of Contents Final Data Sheet 3 Rev. 2.1, 2010-02-09 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .