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Vol. 33, No. 3 Journal of Semiconductors March 2012 Total dose ionizing irradiation effects on a static random access memory field programmable gate array Gao Bo(高博)1; 2; 3, Yu Xuefeng(余学峰)1; 2; ?, Ren Diyuan(任迪远)1; 2, Li Yudong(李豫东)1; 2, Sun Jing(孙静)1; 2, Cui Jiangwei(崔江维)1; 2; 3, Wang Yiyuan(王义元)1; 2; 3, and Li Ming(李明)1; 2 1Xinjiang Technical Institute of Physics Chemistry, Chinese Academy of Sciences, Urumqi 830011, China 2 Xinjiang Province Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China 3Graduate University of the Chinese Academy of Sciences, Beijing 100049, China Abstract: SRAM-based FPGA devices are irradiated by 60Co rays at various dose rates to investigate total dose effects and the evaluation method. The dependences of typical electrical parameters such as static power current, peak–peak value, and delay time on total dose are discussed. The experiment results show that the static power current of the devices reduces rapidly at room temperature (25 ?C) and high temperature (80 ?C) annealing after irradiation. When the device is irradiated at a low dose rate, the delay time and peak–peak value change unobviously with an increase in the accumulated dose. In contrast, the function parameters completely fail at 2.1 kGy(Si) when the dose rate increases to 0.71 Gy(Si)/s. Key words: SRAM-based FPGA; -60Co; ionizing irradiation effects; evaluation methods DOI: 10.1088/1674-4926/33/3/034007 PACC: 6180; 6180E; 8750G 1. Introduction the FPGA device help us to understand their ionizing irradia- tion effects and mechanism. Meanwhile, they provide technical FPGA is the densest and most advanced