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― 36 ― シャープ技 報 第80号・2001年8月 Sputtering Technology of Si Films for Low-Temperature Poly-Si TFTs Si薄膜スパッタリング技術の低温ポリシリコンTFTへの応用 Tolis Voutsas* 1 Hirohiko Nishiki* 2 Mike Atkinson* 1 John Hartzell* 1 Yukihiko Nakata* 3 * 1 Sharp Laboratories of America, Inc. * 2 ディスプレイ技術開発本部　ディスプレイ開発センター 第2研究部 * 3 システム液晶事業本部 Abstract In this paper we discuss the development of sputter-Si technology for application in the area of poly-Si TFT Liquid Crystal Displays. We present the motivation behind this development and the state-of-the-art in materials and devices, based on PVD-Si precursor material. The Si- sputtering process is analyzed and data are presented on the quality of as-sputtered and post-annealed Si-films. The current drawbacks of Si sputtering are discussed, especially with respect to particles, film contamination and equipment availability. Based on the available data, strategies are presented to overcome these problems. PVD- Si technology has come a long way and has become a viable candidate as a Si-deposition method for next generation of poly-Si based applications. This technique is expected to play an even more important role, as the p-Si TFT-LCD industry moves to ultra-low temperature processing and, in parallel, the need increases for process cost reductions. 本稿では，ポリシリコンTFT‐LCDへの応用を目的 としたスパッタSi（PVD-Si）技術について述べる。プ リカーサ材料としてのPVD-Si膜を材料及びデバイス の両面から，開発の背景及び最新動向について紹介す る。現状の問題点としてパーティクル，膜汚染，及び 装置開発が有り，これらの問題点に対するデータに基 いた取り組みを述べる。本技術は，ポリシリコンTFT 液晶が超低温プロセスへ以降する際に，重要な位置付 けを占めると期待でき，プロセスのコストダウンに当 たり，さらにその重要性が増すと考えている。 Introduction Physical Vapor Deposition, or sputtering, is a deposition technique that is widely used in the thin film industry. A good treatise on sputtering can be found elsewhere [1]. PVD relies on the bombardment of a target, made of the material to be deposited, primarily by energetic ions, which are generated by the ionization of a working gas under an applied voltage. The target, upon bombardment, ejects atoms of the target material, which then float and c