- 1、本文档共6页,可阅读全部内容。
- 2、原创力文档(book118)网站文档一经付费(服务费),不意味着购买了该文档的版权,仅供个人/单位学习、研究之用,不得用于商业用途,未经授权,严禁复制、发行、汇编、翻译或者网络传播等,侵权必究。
- 3、本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己接受本站规则且自行承担风险,本站不退款、不进行额外附加服务;查看《如何避免下载的几个坑》。如果您已付费下载过本站文档,您可以点击 这里二次下载。
- 4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等,请点击“版权申诉”(推荐),也可以打举报电话:400-050-0827(电话支持时间:9:00-18:30)。
查看更多
2008-PSS-Thermal instability of electron traps in InAs-GaAs
Thermal instability of electron traps in InAs/GaAs quantum
dot structures
M. Kaniewska ? O. Engstro?m ? M. Kaczmarczyk ?
G. Zaremba
Received: 26 September 2007 / Accepted: 12 March 2008 / Published online: 3 April 2008
Springer Science+Business Media, LLC 2008
Abstract Deep level transient spectroscopy (DLTS) in
temperature and frequency scanned modes has been used to
characterize deep-level defects present in samples with
InAs/GaAs quantum dots (QDs). Two deep energy traps
have been studied in details, a trap with thermal activation
energy at 1.03 eV, which has no correspondence to DLTS
data in the literature to make any comparison and an
accompanied trap at 0.79 eV belonging to EL2 family. The
concentration of the 1.03 eV trap exhibited significant
changes with temperature, whereas the trap at 0.79 eV was
stable on a reduced level. The results for the 1.03 eV trap
are discussed in terms of a metastable double-oscillator.
1 Introduction
While there is a considerable amount of papers on quantum-
confined energy levels related to QDs, much less work has
been devoted to deep-level related defects existing in the
presence of QDs. Commonly acting as non-radiative centers,
they are undesirable in QD-based lasers because they
degrade luminescence efficiency [1]. On the other hand, it
has been demonstrated that a deep-level (M1) coupled to a
QD energy level can provide a rapid energy-relaxation
pathway through which electrons may thermalize and
enhance luminescence efficiency of QDs [2]. Also, utilizing
fast trapping into arsenic antisite defects in samples with
low-temperature grown InAs/GaAs QDs, optical nonlin-
earity and ultrafast response time have been demonstrated
for use in all-optical switching [3]. Thus, an insight into
defect properties in QD structures is highly motivated.
Electrical measurement techniques based on depletion
layer spectroscopy have been used to characterize deep-level
defects present in InAs/GaAs QD samples. In the samples,
when grown by mole
您可能关注的文档
- 03-地图显示与操作.pdf
- 03 OceanBase 0.4.2 配置指南.pdf
- 04-风工程OpenFOAM基础培训-风与湍流.pdf
- 04 Improved Fault-Prone Detection Analysis of Software.pdf
- 03 关系数据模型及其运算基础.pdf
- 040-SalesWave Deep Dive- PAN-OS-6.0 For Virtualized Environments-CNO.pdf
- 041_CZ_EN捷克教育结构.pdf
- 040427 Driver_IC.pdf
- 05 Lecture 5-Political Economy.pdf
- 04-WLAN RRM命令.pdf
最近下载
- LEGO乐高积木拼砌说明书42126,Ford®F-150Raptor皮卡,LEGO®Technic(年份2021)安装指南_第2份共2份.pdf
- 继电保护和安全自动装置技术规程.pdf VIP
- 2023版反假考试复习题库-上(单选题部分).pdf VIP
- (完整)2018年严重精神障碍知识技能竞赛题库.pdf VIP
- 诗词大会网络答题竞赛题库200题(含答案).pdf
- 弗洛姆的人本主义精神分析理论.ppt VIP
- 整本书阅读 会飞的教室(课件)四年级上册语文部编版.pptx
- 2024年江西司法警官职业学院单招数学考试题库及答案解析.docx
- HAIER 海尔 海尔Haier冷柜 BC BD-519HCZ 说明书.pdf
- 消防安全标志设置要求.docx VIP
文档评论(0)