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energy separation （energy difference）between the quantum dot (QD) ground and first-excited states 能量间隔 Analysis by Transmission Electron Microscopy (TEM) has identified 分析 Whilst同时 Stacking Fault s (SF) and threading dislocations (TD) are often associated with the large lattice mismatch in most III – V semiconductor films.与…有关 the GaAs barrier layer was divided in two parts分割 a characteristic v-shape gliding有…特征 The presence of these SFs is observed to create surface QDs被认为是 Areas区域 extending to延伸至 In contrast to与…对比 we would suggest this could be related to我们认为 dislocations occurring at the microscopic level 出现在 migrate away from迁移开 spectral response 光谱响应 in terms of根据，与…有关 composition，content组分 attracting strong interest引起兴趣 aspects such as许多方面例如 As previously reported正如以前报道的 The emission wavelength of the QDs red-shifted by 300 nm红移了300nm As the composition is increased, there is an increase in density and size随着…增加什么增加 the reduction of PL intensity for larger compositions occurs as a result of threading dislocations being formed suppressed by压制，抑制 epilayer外延层 variation变化 interrupted growth method间断生长 ion (Ar+) laser with 514.53 nm氩离子激光波长 it can be seen that从…可以看出 reveal a strong quantum localization effect展示 Such a blue shift in EL wavelength could be attributed to the band-filling effect of localized energy states蓝移，归咎于，能带填充效应 A blueshift of 3 and 1.7 cm?1 蓝移 Incorporating结合 1.3–1.6mm has been achieved for InAs/GaAs QDs by实现 are limited by性能局限于 received little attention to date现在已经没人关注 spacer layer隔离层 the initial 15 nm of the GaAs SPL was deposited at 5101C, following which the temperature was increased to 580 1 C for the remainder of the GaAs SPL随后 thermal escape热逃逸 QD ensembles量子点群 the value of E E值 are dramatically reduced巨大的 takes place发生，出现 QD PL band caused by PL图，引起 are taken into account考虑 active region活性区 vertical strain coupling 垂直耦合 sample c shows the highest value (75 meV) followed by sample b with 60 meV and sample d with 56 meV排序 is crucial for对