关于MOS布线时的天线效应(Antennaeffect)的解说.docx

关于mos布线的天线效应的解说 The antenna effect, more formally plasma induced gate oxide damage, is an effect that can potentially cause yield and reliability problems during the manufacture of MOS integrated circuits.[1][2][3][4][5] Fabs normally supply antenna rules, which are rules that must be obeyed to avoid this problem. A violation of such rules is called an antenna violation. The word antenna is something of a misnomer in this context—the problem is really the collection of charge, not the normal meaning of antenna, which is a device for converting electromagnetic fields to/from electrical currents. Occasionally the phrase antenna effect is used in this context,[6] but this is less common since there are many effects,[7] and the phrase does not make clear which is meant.( e5 P6 t; L5 Y) f0 4 H# C8 X; ^ G1 `4 f/ l: 天线效应，更正式地说叫做 电浆引起的栅氧损伤，在MOS结构的制造过程中可能会带来良率损失或可靠性问题。Fab通常会提供天线效应的设计规范，这条规范设计人员必须遵守。使用Antenna这个单词，从严格意义上说不是太准确，因为这里的天线是用来收集电荷，而不是用于电磁场转换的天线。 Figure 1(a) shows a side view of a typical net in an integrated circuit. Each net will include at least one driver, which must contain a source or drain diffusion (in newer technology implantation is used), and at least one receiver, which will consist of a gate electrode over a thin gate dielectric (see Figure 2 for a detailed view of a MOS transistor). Since the gate dielectric is so thin, only a few molecules thick, a big worry is breakdown of this layer. This can happen if the net somehow acquires a voltage somewhat higher than the normal operating voltage of the chip. (Historically, the gate dielectric has been silicon dioxide, so most of the literature refers to gate oxide damage or gate oxide breakdown. As of 2007, some manufacturers are replacing this oxide with various high-k dielectric materials which may or may not be oxides, but the effect is still the same.)* `7 t7 K5 i r* i M8 w }% O) t 图1是一个典型的IC 互连(天线网)的侧视图，每个天线网至少有一个驱动端(source或drain的扩散区/离子植入区)，至少一个接收端(Gate oxide上的poly silicon电极)。由于Gate介质层很薄，容易发生超过介质层本身耐压能力的击