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AluminiumEtching.PDF
Aluminium
Etching
Revised: 2013-11-07 Source:
/downloads/application_notes.html
Concentrations
All chemicals concentrations mentioned in this chapter with a * refer to a conventional concen-
tration listed in the last section of this document.
Aluminium
Aluminium has a density of 2.7 g/cm3 and therefore
belongs to the light metals. Its crystal structure is cu-
bic face centred.
Due to its high electric conductivity, aluminium is used
for conductors in microelectronics where it is often al-
loyed with copper in order to prevent electro migra-
tion, or with silicon in order to prevent the formation
of (silicon-consuming) aluminium-silicon alloys. Al: cubic face centred
With a standard potential of -1.66 V, aluminium does
not belong to the noble metals. However, the forma-
tion of a very thin (few nm) Al2O3 film makes it very inert in many substances. Therefore, Al
etchants require at least compounds for dissolving Al2O3 as well as for etching (or, respectively,
oxidizing) aluminium.
Aluminium Etching Mechanism
Typical Aluminium etchants contain mixtures of 1-5 % HNO3* (for Al oxidation), 65-75 %
H3PO4* (to dissolve the Al2O3), 5-10 % CH3COOH* (for wetting and buffering) and H2O dilution
to define the etch rate at given temperature.
Aluminium etching is highly exothermic, an (inevitable, since isotropic etching) underetching
of the resist mask causes local heating (increased etch rate) and super-proportional under-
etching of the mask as a consequence, if no agitation is performed.
Strong H2-bubbling reduces etch homogeneity. Improvements of the etch rate homogeneity
can be achieved if the etching will be interrupted every approx. 30 seconds by a short dip into
DI water. hereby, the H2 bubbles temporarily vanish.
Generally, etching starts after the dissolution (by H3PO4) of few nm Al2O3 film present on every
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