buk7y9r9-80ex技术资料下载-BUK7Y9R9-80E.PDF

BUK7Y9R9-80E N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits ? Q101 compliant ? Repetitive avalanche rated ? Suitable for thermally demanding environments due to 175 °C rating ? True standard level gate with VGS(th) rating of greater than 1 V at 175 °C 3. Applications ? 12 V, 24 V and 48 V Automotive systems ? Motors, lamps and solenoid control ? Transmission control ? Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 80 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 - - 89 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 195 W Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; - 7.3 9.9 mΩ resistance Fig. 11 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 64 V; - 14.4 - nC Fig. 13; Fig. 14 Nexperia BUK7Y9R