东南university电子器件金半接触.ppt

acceptor 受主 donor 施主 recombination 复合 majority 多子 minority 少子 transition region 过渡区 depletion region 耗尽区 contact barrier 接触势垒 p-n junction pn结 heterojunction/异质结 EHP 电子空穴对 homojunction/同质结 Schottky barrier /肖特基势垒 barrier height/势垒高度 ideal/理想的 work function/功函数 practical/实际的 electron affinity/电子亲和能 Fermi level/费米能级 rectifier /整流器 electrostatic potential/静电势 breakdown /击穿 rectifying contacts/整流接触 Ohmic contacts/欧姆接触 surface state/表面态 lattice-matched/晶格匹配的 tunneling effect/隧道效应 半导体器件工作的基本方程 泊松方程 电流密度方程 电流连续性方程 Many of the useful properties of a p-n junction can be achieved by simply forming an appropriate metal-semiconductor(MS) contact. 5.7 Metal-Semiconductor junctions or contacts(金属-半导体结、金-半接触） 5.7.1 Schottky Barriers /wiki/Walter_H._Schottky Possibly, in retrospect, Schottkys most important scientific achievement was to develop (in 1914) the well-known classical formula, now written -q2/4πε0x, for the interaction energy between a point charge q and a flat metal surface, when the charge is at a distance x from the surface. Owing to the method of its derivation, this interaction is called the image potential energy (image PE). Schottky based his work on earlier work by (Lord) Kelvin relating to the image PE for a sphere. Schottkys image PE has become a standard component in simple models of the barrier to motion, M(x), experienced by an electron on approaching a metal surface or a metal-semiconductor interface from the inside. 1. Schottky effect (The image PE is usually combined with terms relating to an applied electric field F and to the height h (in the absence of any field) of the barrier. This leads to the following expression for the dependence of the barrier energy on distance x, measured from the electrical surface of the metal, into the vacuum or into the semiconductor: Here, e is the elementary positive charge, ε0 is the electric